IC SRAM 16KBIT 35NS 24DIP

IDT6116LA35TP

Manufacturer Part NumberIDT6116LA35TP
DescriptionIC SRAM 16KBIT 35NS 24DIP
ManufacturerIDT, Integrated Device Technology Inc
IDT6116LA35TP datasheet
 


Specifications of IDT6116LA35TP

Format - MemoryRAMMemory TypeSRAM
Memory Size16K (2K x 8)Speed35ns
InterfaceParallelVoltage - Supply4.5 V ~ 5.5 V
Operating Temperature0°C ~ 70°CPackage / Case24-DIP (0.300", 7.62mm)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names6116LA35TP
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Features
◆ ◆ ◆ ◆ ◆
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆ ◆ ◆ ◆ ◆
Low-power consumption
◆ ◆ ◆ ◆ ◆
Battery backup operation
– 2V data retention voltage (LA version only)
◆ ◆ ◆ ◆ ◆
Produced with advanced CMOS high-performance
technology
◆ ◆ ◆ ◆ ◆
CMOS process virtually eliminates alpha particle soft-error
rates
◆ ◆ ◆ ◆ ◆
Input and output directly TTL-compatible
◆ ◆ ◆ ◆ ◆
Static operation: no clocks or refresh required
◆ ◆ ◆ ◆ ◆
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆ ◆ ◆ ◆ ◆
Military product compliant to MIL-STD-833, Class B
Functional Block Diagram
A
0
DECODER
A
10
I/O
0
I/O
7
CS
OE
CONTROL
CIRCUIT
WE
©2006 Integrated Device Technology, Inc.
CMOS Static RAM
16K (2K x 8-Bit)
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
ADDRESS
INPUT
DATA
CIRCUIT
1
IDT6116SA
IDT6116LA
128 X 128
MEMORY
ARRAY
I/O CONTROL
JANUARY 2009
V
CC
GND
,
3089 drw 01
DSC-3089/06

IDT6116LA35TP Summary of contents

  • Page 1

    ... Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. ADDRESS INPUT DATA CIRCUIT 1 IDT6116SA IDT6116LA 128 X 128 MEMORY ARRAY I/O CONTROL JANUARY 2009 V CC GND , 3089 drw 01 DSC-3089/06 ...

  • Page 2

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Pin Configurations P24 P24 D24 D24 SO24 SO24-4 ...

  • Page 3

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Recommended Operating Temperature and Supply Voltage Ambient Grade Temperature O O Military - +125 Industrial - +85 C Commercial +70 O ...

  • Page 4

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) DC Electrical Characteristics (V = 5.0V ± 10 0.2V Symbol Parameter Power I Operating Power Supply CC1 SA Current, CS < Outputs Open LA ...

  • Page 5

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Low V Data Retention Waveform 4.5V t CDR Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test ...

  • Page 6

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) Chip Select to Output in Low-Z t CLZ ...

  • Page 7

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT Supply Currents I SB Timing Waveform of Read Cycle No. 2 ADDRESS DATA PREVIOUS DATA VALID ...

  • Page 8

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write Pulse ...

  • Page 9

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA PREVIOUS DATA VALID OUT DATA IN Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ...

  • Page 10

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Ordering Information — Military 6116 XX XXX Device Type Power Speed Ordering Information — Commercial & Industrial 6116 XX XXX Device Type Power Speed Military, Commercial, and Industrial Temperature Ranges X X ...

  • Page 11

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Datasheet Document History 1/7/ Pg. 11 08/09/00 02/01/01 12/30/03 Pg. 3,10 03/31/05 Pg. 10 11/15/06 Pg. 3 Pg.4 CORPORATE HEADQUARTERS 6024 Silver Creek Valley ...