TC58FVB160AFT-70 Toshiba, TC58FVB160AFT-70 Datasheet

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TC58FVB160AFT-70

Manufacturer Part Number
TC58FVB160AFT-70
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58FVB160AFT-70

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC58FVB160AFT-70(YP)
16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
Power supply voltage
Operating temperature
Organization
Functions
V
Ta = −40°C~85°C
2M × 8 bits / 1M × 16 bits
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
Data Polling/Toggle Bit
Block Protection
Automatic Sleep, Support for Hidden ROM Area
Common Flash Memory Interface (CFI)
Byte/Word Modes
DD
= 2.7 V~3.6 V
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Block erase architecture
Boot block architecture
Mode control
Erase/Program cycles
Access time
Power consumption
Package
1 × 16 Kbytes / 2 × 8 Kbytes
1 × 32 Kbytes / 31 × 64 Kbytes
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Compatible with JEDEC standard commands
10
70 ns
100 ns
5 µA
30 mA
15 mA
TC58FVT160/B160AFT:
TC58FVT160/B160AXB:
TC58FVT160/B160AFT/AXB-70,-10
5
cycles typ.
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA48-0608-0.80AZ (weight: 0.090 g)
(C
(C
(Standby)
(Read operation)
(Program/Erase operations)
L
L
: 30 pF)
: 100 pF)
2004-09-01 1/42

Related parts for TC58FVB160AFT-70

TC58FVB160AFT-70 Summary of contents

Page 1

... Byte/Word Modes TC58FVT160/B160AFT/AXB-70,-10 • Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes 1 × 32 Kbytes / 31 × 64 Kbytes • Boot block architecture TC58FVT160AFT/AXB: top boot block TC58FVB160AFT/AXB: bottom boot block • Mode control Compatible with JEDEC standard commands • Erase/Program cycles 5 10 cycles typ. ...

Page 2

PIN ASSIGNMENT (TOP VIEW) …TC58FVT160/B160AFT A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 RESET A18 16 A17 ...

Page 3

... SS WE Control Circuit t OEHP Command RESET Register Control Circuit OE A0 A19 A-1 TC58FVT160/B160AFT/AXB-70,- Buffer Auto Sequence Control Circuit Program Erase Circuit Circuit Column Decoder & Sense Amp Memory Cell Array Erase Block Decoder DQ0 DQ15 I/O Buffer Data Latch 2004-09-01 3/42 ...

Page 4

MODE SELECTION MODE CE Read ID Read (Manufacturer Code) ID Read (Device Code) Standby Output Disable Write Block Protect 1 Verify Block Protect Temporary Block Unprotect Hardware Reset / Standby Notes ...

Page 5

COMMAND SEQUENCES BUS FIRST BUS COMMAND WRITE WRITE CYCLE SEQUENCE CYCLES Addr. REQ’D Read/Reset 1 XXXH Word 555H Read/Reset 3 Byte AAAH Word 555H ID Read 3 Byte AAAH Word 555H Auto-Program 4 Byte AAAH Program Suspend ...

Page 6

... READ MODE To read data from the memory cell array, set the device to Read Mode. In Read Mode, the device can perform high-speed random access as an asynchronous ROM. The device is automatically set to Read Mode immediately after power- completion of automatic operation ...

Page 7

Output Disable Mode Inputting disables output from the device and sets DQ to High-Impedance. IH Command Write The TC58FVT160/B160A uses the standard JEDEC control commands for a single-power supply E Command Write is executed by inputting the ...

Page 8

... The device allows programmed into memory cells which contain cannot be programmed into cells which contain 0s. If this is attempted, execution of Auto Program will fail. This is a user error, not a device error ...

Page 9

... Command Register and enter Read Mode. The Erase Hold Time restarts on each successive rising edge Once operation starts, all memory cells in the selected block are automatically preprogrammed to 0, erased and verified as erased by the chip. The device status is indicated by the setting of the Hardware Sequence flag ...

Page 10

Erase Suspend / Erase Resume Modes Erase Suspend Mode suspends Auto Block Erase and reads data from or writes data to an unselected block. The Erase Suspend command is allowed during an auto block erase operation but is ignored in ...

Page 11

... Hidden ROM Area The TC58FVT160/B160A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, data in the block cannot be overwritten once the block is protected. ...

Page 12

... COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVT160/B160A conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode, DQ8~DQ15 all output 0s. To exit this mode, input the Reset command. CFI CODE TABLE ADDRESS A6~A0 ...

Page 13

ADDRESS A6~A0 DATA DQ15~DQ0 2CH 0004H 2DH 0000H 2EH 0000H 2FH 0040H 30H 0000H 31H 0001H 32H 0000H 33H 0020H 34H 0000H 35H 0000H 36H 0000H 37H 0080H 38H 0000H 39H 001EH 3AH 0000H 3BH 0000H 3CH 0001H 40H 0050H ...

Page 14

HARDWARE SEQUENCE FLAGS The TC58FVT160A/B160A has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when ...

Page 15

... The Toggle bit begins toggling on the rising edge the last bus cycle. DQ6 alternately outputs for each OE access while has been completed, toggling stops and valid memory cell data can be read by subsequent reading. If the operation fails, the DQ6 output toggles. ...

Page 16

... In this case, even if a proper command is input, the device may not operate. To avoid this possibility, clear the Command Register before command input environment prone to system noise, Toshiba recommend input of a software or hardware reset before command input. ...

Page 17

ABSOLUTE MAXIMUM RATINGS SYMBOL V V Supply Voltage Input Voltage IN V Input/Output Voltage DQ V Maximum Input Voltage for A9, OE and RESET IDH P Power Dissipation D T Soldering Temperature (10 s) SOLDER T Storage ...

Page 18

DC CHARACTERISTICS SYMBOL PARAMETER I Input Leakage Current LI I Output Leakage Current LO V Output High Voltage OH V Output Low Voltage Average Read Current DDO1 Average Program Current DDO2 ...

Page 19

AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE SYMBOL t Read Cycle Time RC t Address Access Time ACC t CE Access Time Access Time Output Low-Z CEE Output Low-Z OEE ...

Page 20

COMMAND WRITE/PROGRAM/ERASE CYCLE SYMBOL t Command Write Cycle Time CMD Address Set-up Time / BYTE Set-up Time tAS t Address Hold Time / BYTE Hold Time AH t Address Hold Time from WE High level AHW t Data Set-up Time ...

Page 21

TIMING DIAGRAMS Read / ID Read Operation Address AHW t WE OEH D OUT ID Read Operation (apply OUT ...

Page 22

Command Write Operation This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. • WE Control Address ...

Page 23

ID Read Operation (input command sequence) Address 555H t CMD OES WE D AAH IN D OUT Read Mode (input of ID Read command sequence) (Continued) Address 555H t CMD AAH IN D ...

Page 24

WE Auto-Program Operation ( Address 555H t CMD OES WE D AAH IN D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data Auto Chip Erase / Auto Block Erase ...

Page 25

CE Auto-Program Operation ( Address 555H t CMD OES AAH D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data Auto Chip Erase / Auto Block Erase ...

Page 26

Program/Erase Suspend Operation Address B0H IN Hi-Z D OUT Program/Erase Mode RA: Read address Program/Erase Resume Operation Address OES WE t DF1 t DF2 OUT ...

Page 27

during Auto Program/Erase Operation Hardware Reset Operation WE RESET RESET Read after Address RESET D OUT TC58FVT160/B160AFT/AXB-70,-10 Command input sequence READY ...

Page 28

BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 BYTE during Write Operation CE WE BYTE TC58FVT160/B160AFT/AXB-70,-10 t BTD Data Output Data Output Data Output t ACC Data Output Address Input 2004-09-01 28/42 ...

Page 29

DATA Hardware Sequence Flag ( Last Address Command Address t CMD Last D Command IN Data DQ7 DQ0~DQ6 t BUSY PA: Program address BA: Block address Hardware Sequence Flag (Toggle bit) Last Address Command ...

Page 30

Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address * : 01H indicates that block is protected. TC58FVT160/B160AFT/AXB-70,-10 ...

Page 31

Block Protect 2 Operation Address t CMD VPS RESET D 60H IN D OUT BA: Block address Address of next block * : 01H indicates that ...

Page 32

FLOWCHARTS Auto Program Address = Address + 1 Note: The above command sequence takes place in Word Mode. TC58FVT160/B160AFT/AXB-70,-10 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto Program Completed Auto-Program Command Sequence ...

Page 33

Fast Program Address = Address + 1 Fast Program Set Command Sequence (Address/Data) 555H/AAH 2AAH/55H 555H/20H Note: The above command sequence takes place in word mode. TC58FVT160/B160AFT/AXB-70,-10 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see ...

Page 34

Auto Erase Auto Chip Erase Command Sequence (address/data) 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H Note: The above command sequence takes place in Word Mode. TC58FVT160/B160AFT/AXB-70,-10 Start Auto Erase Command Sequence (see below) DATA Polling or Toggle Bit Auto Erase Completed ...

Page 35

DATA DQ7 Polling Start Read Byte (DQ0~DQ7) Addr DQ7 = Data? No DQ5 = 1? Read Byte (DQ0~DQ7) Addr DQ7 = Data? Fail DQ6 Toggle Bit Start Read Byte (DQ0~DQ7) Addr DQ6 = Toggle? ...

Page 36

Block Protect 1 PLSCNT = 1 Set up Block Address Addr. = BPA Wait for 4 µ Wait for 4 µ s Wait for 100 µ s Wait for 4 µ s Wait for ...

Page 37

Block Protect 2 RESET = V Wait for 4 µ s PLSCNT = 1 Block Protect 2 Command First Bus Write Cycle (XXXH/60H) Set up Address Addr. = BPA Block Protect 2 Command Second Bus Write Cycle Wait for 100 ...

Page 38

BLOCK ERASE ADDRESS TABLES (1) TC58FVT160A (top boot block) BLOCK ADDRESS BLOCK # A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 ...

Page 39

TC58FVB160A (bottom boot block) BLOCK ADDRESS BLOCK # A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 ...

Page 40

PACKAGE DIMENSIONS TC58FVT160/B160AFT/AXB-70,-10 2004-09-01 40/42 Unit: mm ...

Page 41

PACKAGE DIMENSIONS TC58FVT160/B160AFT/AXB-70,-10 2004-09-01 41/42 Unit: mm ...

Page 42

... It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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