TC58DVM72A1FT Toshiba, TC58DVM72A1FT Datasheet - Page 19

• Manufacturer Part Number: TC58DVM72A1FT
• Description: IC FLASH 128MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM72A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DEVICE OPERATION
Select page
Select page
RY
RY
Read Mode (1)
Read Mode (2) x8 only
CLE
CLE
ALE
ALE
timing details and the block diagram.
/
/
WE
WE
CE
RE
BY
CE
RE
BY
I/O
I/O
N
N
Read mode (1) is set when a 00H command is issued to the Command register. Refer to Figure 3 below for
00H
01H
M
Figure 3. Read mode (1) operation
Figure 4. Read mode (2) operation
X16 : m=263
X8 : m=527
M
M
Start-address input
Start-address input
256
N
N
M
527
m
Busy
Busy
Cell array
Cell array
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
starts on the rising edge of WE in the third cycle (after the
address information has been latched). The device will be in
Busy state during this transfer period. The CE signal must stay
Low after the third address input and during Busy state.
Serial data can be output synchronously with the RE clock
from the start pointer designated in the address input cycle.
the same as that of Read mode (1). If the start pointer is to be set
after column address 256, use Read mode (2).
A data transfer operation from the cell array to the register
After the transfer period the device returns to Ready state.
The operation of the device after input of the 01H command is
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