TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 17

• Manufacturer Part Number: TC58DVM82A1FT
• Description: IC FLASH 256MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Schematic Cell Layout and Address Assignment
65536 pages
65536 pages
2048 blocks
2048 blocks
Table 1. Addressing
First cycle
Second cycle
Third cycle
* : A8 is automatically set to Low or High by a 00H command or a 01H command.
The Program operation works on page units while the Erase operation works on block units.
I/O9-16 should be low when address is input.
Figure 2-2. x16 Schematic Cell Layout
Figure 2. Schematic Cell Layout
512
256
528
264
I/O8
A16
A24
A7
16
I/O7
A15
A23
8
A6
I/O6
A14
A22
16I/O
A5
8I/O
I/O8
I/O16
32 pages
32 pages
1 block
1 block
I/O5
A13
A21
A4
I/O1
I/O1
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
I/O4
A12
A20
A3
for main memory storage and 16 bytes are for redundancy
or for other uses.
used for main memory storage and 8 words are for
redundancy or for other uses.
consecutive clock cycles, as shown in Table 1.
I/O3
A11
A19
A2
A page consists of 528 bytes in which 512 bytes are used
A page consists of 264 words in which 256 words are
An address is read in via the I/O port over three
1 page
1 block
Capacity
1 page
1 block
Capacity
I/O2
A10
A18
A1
528 bytes
264 words
528 bytes
264 words
I/O1
528 bytes
264 words
A17
A0
A9
A0~A7:
A9~A24: Page address
A14~A24: Block address
A9~A13: NAND address in block
32 pages
32 pages
32 pages
32 pages
Column address
2003_01_29 17/34
(16K
(8K
2048 blocks
2048 blocks
256) words
512) bytes