TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 18

• Manufacturer Part Number: TC58DVM82A1FT
• Description: IC FLASH 256MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Operation Mode: Logic and Command Tables
operations shown in Table 3. Address input, command input and data input/output are controlled by the CLE,
ALE, CE , WE , RE and WP signals, as shown in Table 2.
Table 2. Logic table
Command Input
Address Input
Data Input
Serial Data Output
During Read (Busy)
During Programming (Busy)
During Erasing (Busy)
Program, Erase Inhibit
Standby
H: V
* 1: Refer to Application Note (10) toward the end of this document regarding the WP signal when Program or Erase Inhibit
Table 3. Command table (HEX)
Serial Data Input
Read Mode (1)
Read Mode (2)
Read Mode (3)
Reset
Auto Program
Auto Block Erase
Status Read
ID Read
Table 4. Read mode operation states
Output Select
Output Deselect
H: V
01 command isn’t implemented by x16.
The operation modes such as Program, Erase, Read and Reset are controlled by the ten different command
Table 4 shows the operation states for Read mode.
IH
IH
, L: V
, L: V
IL
IL
, * : V
, * : V
IH
IH
or V
or V
IL
IL
First Cycle
CLE
L
L
80
00
01
50
FF
10
60
70
90
Second Cycle
ALE
L
L
CLE
D0
H
L
L
L
*
*
*
*
*
*
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
CE
L
L
Acceptable while Busy
ALE
H
L
L
L
*
*
*
*
*
*
WE
H
H
CE
H
H
L
L
L
L
L
*
*
*
RE
H
L
I/O16 15 14 13 12 11 10 I/O9
HEX data bit assignment
(Example)
I/O8 7
1
0
High impedance
WE
H
H
*
*
*
*
*
Data output
I/O1~I/O16
0
0
Serial data input: 80H
0
6
0
2003_01_29 18/34
0
5
0
RE
H
H
H
H
*
*
*
*
*
0
4
0
0
3
0
Power
Active
Active
0
2 I/O1
0
0 V/Vcc
WP
0
0
H
H
H
L
*
*
*
*
*
*1