TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 32

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TC58DVM82A1FT

Manufacturer Part Number
TC58DVM82A1FT
Description
IC FLASH 256MBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58DVM82A1FT

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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(13)
Bad Block Test Flow
Invalid blocks (bad blocks)
do not use these bad blocks.
The device contains unusable blocks. Therefore, at the time of use, please check whether a block is bad and
Figure 26.
Block No.
* 1: No erase operation is allowed to detected bad blocks
Block No.
Bad Block
Bad Block
No
1
FFFFh(x16). For Bad Block, all bytes are not in the FFh state(x8) or FFFFh
state(x16). Please don’t perform erase operation to Bad Block.
Figure 27 shows the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
isolated from the Bit line by the Select gate
Valid (Good) Block Number
At the time of shipment, all data bytes in a Valid Block are FFh(x8) or
Check if the device has any bad blocks after installation into the system.
A bad block does not affect the performance of good blocks because it is
The number of valid blocks at the time of shipment is as follows:
Block No.
Block No
Read Check
Figure 27
Start
End
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
Pass
Yes
2048
1
Fail
2008
MIN
Read Check : to verify the column address 517
Bad Block * 1
TYP.
bytes(x8) or 256 and 261
words(x16) of the first page in the
block with FFh(x8) or FFFFh(x16)
2003_01_29 32/34
MAX
2048
Block
UNIT

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