TC58DVM92A1FT Toshiba, TC58DVM92A1FT Datasheet - Page 20

• Manufacturer Part Number: TC58DVM92A1FT
• Description: IC FLASH 512MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM92A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PIN FUNCTIONS
are configured as shown in Figure 1.
The device is a serial access memory which utilizes time-sharing input of address information. The device pin-outs
Command Latch Enable: CLE
operation mode command into the internal command
register. The command is latched into the command
register from the I/O port on the rising edge of the WE
signal while CLE is High.
Address Latch Enable: ALE
address information or input data into the internal
address/data register.
Chip Enable:
signal is ignored when device is in Busy state (
will not enter Standby mode even if the CE input goes High. The CE signal
must stay Low during the Read mode Busy state to ensure that memory
array data is correctly transferred to the data register.
Write Enable:
Read Enable:
I/O Port: I/O1 to 8
device.
Write Protect:
regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off
sequence when input signals are invalid.
Ready/Busy:
Busy state (
(
WE if ALE is High.
RY
The CLE input signal is used to control loading of the
The ALE signal is used to control loading of either
Address information is latched on the rising edge of
Input data is latched if ALE is Low.
The device goes into a low-power Standby mode when CE goes High during a Read operation. The CE
The WE signal is used to control the acquisition of data from the I/O port.
The RE signal controls serial data output. Data is available t
The internal column address counter is also incremented (Address Address
The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from the
The WP signal is used to protect the device from accidental programming or erasing. The internal voltage
The
/
BY
RY
/
BY
H) after completion of the operation. The output buffer for this signal is an open drain.
RY
RY
CE
output signal is used to indicate the operating condition of the device. The
/
RE
WE
BY
WP
/
BY
L) during the Program, Erase and Read operations and will return to Ready state
RY
/
BY
L), such as during a Program or Erase operation, and
RY
GND
CLE
V
ALE
V
/
RE
WE
WP
NC
NC
NC
NC
NC
CE
NC
NC
NC
NC
NC
NC
NC
NC
NC
BY
CC
SS
REA
after the falling edge of RE .
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Figure 1. Pinout
TC58DVM92A1FT00
l) on this falling edge.
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RY
/
BY
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
signal is in
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
V
V
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
CC
SS