TE28F640J3C115SL7HA Intel, TE28F640J3C115SL7HA Datasheet - Page 20

• Manufacturer Part Number: TE28F640J3C115SL7HA
• Description: IC FLASH 64MBIT 115NS 56TSOP
• Manufacturer: Intel

Specifications of TE28F640J3C115SL7HA

• Format - Memory: FLASH
• Memory Type: StrataFlash® FLASH
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 115ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 860794

256-Mbit J3 (x8/x16)
6.2
20
Symbol
I
I
I
NOTES:
CCE
CCWS
CCES
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
2. Includes STS.
3. CMOS inputs are either V
4. Sampled, not 100% tested.
5. I
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
mode, the device’s current draw is I
Table 6.
CCWS
Table 7.
and I
V
Block Lock-Bits Current
V
Block Erase Suspend
Current
CC
CC
Block Erase or Clear
CCES
Program Suspend or
DC Current Characteristics (Sheet 2 of 2)
DC Voltage Characteristics
DC Voltage Characteristics
V
VCCQ
Symbol
IL
V
VCC
are specified with the device selected. If the device is read or written while in erase suspend
V
PENLK
V
V
Parameter
OH
OL
IH
CC
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Erase and Lock-Bit Operations
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
PEN
Lockout during Program,
CCR
Parameter
and I
CCWS
Typ
35
40
2.7 - 3.6V
2.7 - 3.6V
Max
70
80
10
Unit
mA
mA
mA
0.85 ×
V
V
–
–0.5
Min
2.0
CCQ
CCQ
0.2
CMOS Inputs, V
TTL Inputs, V
Device is enabled (see
V
+ 0.5
Max
0.8
0.4
0.2
2.2
CCQ
IL
or V
PEN
Unit
Test Conditions
IH
PEN
V
V
V
V
V
V
V
.
= V
= V
CC
V
I
V
I
V
I
V
I
Table
OL
OL
OH
OH
CC
CCQ
CCQ
CCQ
CCQ
Test Conditions
= 2 mA
= 100 µA
= –2.5 mA
= –100 µA
= V
= V
= V
= V
13)
CCQ
CCQ
CCQ
CCQ
Min
Min
Min
Min
Datasheet
2,3,4,7
Notes
2, 6
Notes
2,6
1,2
1,2
1,4
1,5