TE28F640J3C115SL7HA Intel, TE28F640J3C115SL7HA Datasheet - Page 49
TE28F640J3C115SL7HA
Manufacturer Part Number
TE28F640J3C115SL7HA
Description
IC FLASH 64MBIT 115NS 56TSOP
Manufacturer
Intel
Datasheet
1.RC28F256J3C125SL7HE.pdf
(72 pages)
Specifications of TE28F640J3C115SL7HA
Format - Memory
FLASH
Memory Type
StrataFlash® FLASH
Memory Size
64M (8Mx8, 4Mx16)
Speed
115ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
860794
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13.4
Datasheet
Table 21. Byte-Wide Protection Register Addressing (Sheet 2 of 2)
Array Protection
The V
below the V
operation, V
operation, poll the Status Register and analyze the bits.
NOTE: All address lines not specified in the above table must be 0 when accessing the Protection Register,
A
B
C
D
E
6
7
8
9
F
PEN
i.e.g., A[MAX:9] = 0.
Factory
Factory
signal is a hardware mechanism to prohibit array alteration. When the V
User
User
User
User
User
User
User
User
PENLK
PEN
must be set to a valid voltage level. To determine the status of an erase or program
voltage, array contents cannot be altered. To ensure a proper erase or program
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
0
0
256-Mbit J3 (x8/x16)
PEN
0
0
1
1
0
0
1
1
0
0
voltage is
0
1
0
1
0
1
0
1
0
1
49
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