M5M5W816TP-70HI#A0 Renesas Electronics America, M5M5W816TP-70HI#A0 Datasheet

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M5M5W816TP-70HI#A0

Manufacturer Part Number
M5M5W816TP-70HI#A0
Description
IC SRAM 8MBIT 70NS 44TSOP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of M5M5W816TP-70HI#A0

Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M5M5W816TP70HI#A0

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M5M5W816TP-70HI#A0M5M5W816TP-70HI
Manufacturer:
MIT
Quantity:
3 000
Company:
Part Number:
M5M5W816TP-70HI#A0M5M5W816TP-70HI
Quantity:
10
Company:
Part Number:
M5M5W816TP-70HI#A0M5M5W816TP-70HI#BT
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

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M5M5W816TP-70HI#A0 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp ...

Page 4

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI DESCRIPTION The M5M5W816TP amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology . The M5M5W816TP is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es ...

Page 5

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI FUNCTION The M5M5W816TP is organized as 524288-words by 16- bit. These dev ices operate on a single +2.7~3.6V power supply , and are directly TTL compatible to both input and output. Its f ully s t atic circuit needs no clocks and no ref resh, and makes it usef ul. ...

Page 6

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS Symbol Parameter V cc Supply v oltage V Input v oltage I V Output v oltage O P Power dissipation d Operating T temperature a T Storage temperature stg DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS Symbol Parameter V High-lev el input v oltage ...

Page 7

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI AC ELECTRICAL CHARACTERISTICS (1) TEST CONDITIONS Supply v oltage Input pulse Input rise time and f all time Ref erence lev el Output loads (2) READ CYCLE Parameter Symbol t Read cy cle time CR t (A) Address access time a t (S) Chip select 1 access time ...

Page 8

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI (4)TIMING DIAGRAMS Read cycle Read cycle A 0~18 BC1#,BC2# (Note3) S# (Note3) OE# (Note3 "H" lev el DQ 1~16 Write cycle Write cycle ( W# control mode ) A 0~18 BC1#,BC2# (Note3) S# (Note3) OE 1~16 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM ...

Page 9

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI Write cycle (BC# control mode) A 0~18 BC1#,BC2# S# (Note3) (Note5) W# (Note3) DQ 1~16 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S# low ov erlaps BC1# and/or BC2# low and W# low. Note 5: When the f alling edge simultaneously or prior to the f alling edge of BC1# and/or BC2# or the f alling edge of S#, the outputs are maintained in the high impedance state ...

Page 10

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI Write cycle (S# control mode) A 0~18 BC1#, BC2# (Note3 (Note3) DQ 1~16 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM ( (A) su (Note5) (Note4) t (D) su DATA IN STABLE MITSUBISHI LSIs t (Note3) (W) rec (Note3 ...

Page 11

... Ver. 6.1 M5M5W816TP - 55HI, 70HI, 85HI POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD (BC) Byte control input BC1# & BC2 (S) Chip select input S# Power down Icc (PD) supply c urrent (2) TIMING REQUIREMENTS Symbol Parameter t Power down set up time ...

Page 12

Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to ...

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