MD5811-D256-V3Q18-X SanDisk, MD5811-D256-V3Q18-X Datasheet - Page 79

• Manufacturer Part Number: MD5811-D256-V3Q18-X
• Description: IC MDOC P3 256MB 48-TSOP
• Manufacturer: SanDisk

Specifications of MD5811-D256-V3Q18-X

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

11.3.5 Read Cycle Timing MultiBurst
In Figure 28, the MultiBurst Control register values are: LATENCY=0, LENGTH=4, CLK_INV=0.
Note: Shown with Burst Mode Controller register values: LATENCY=0, LENGTH=4.
76
t
t
t
t
HO
HO
SU
SU
t
t
t
(OE0-CLK1)
(OE0-CLK0)
t
(OE0-CLK1)
(OE0-CLK0)
P
(HOLD=0)
(HOLD=1)
Symbol
W
W
REC
t
t(CLK)
(CLK-D)
LOZ
(CLK1)
(CLK0)
D[15:0]
D[15:0]
(OE)
(D)
OE#
CLK
t
HO
(OE0-CLK0)
t
HO
OE#
OE#
CLK
CLK
CLK
CLK high pulse width
CLK high pulse width
CLK low pulse width
CLK low pulse width
CLK period
CLK period
OE# negated to start of next cycle
OE#
driven
(OE0-CLK1)
t
SU
(OE0-CLK1)
Insert LATENCY clock cycles
t
W
1,3
(CLK1)
to OE#
to OE#
to D delay
to CLK
to CLK
to D
6
7
Table 17: MultiBurst Read Cycle Parameters
Description
Figure 28: MultiBurst Read Timing
setup time
setup time
hold time
hold time
6
7
t
Turbo operation
t
6
7
W
LOZ
t
P
(CLK0)
(CLK-D)
(D)
Data Sheet, Rev. 0.3
1, 4
1, 5
1, 4
1, 5
2
0
t(CLK)
0
VCC=2.5-3.6V
VCCQ=VCC
Min
10
10
27
29
1
1
7
7
8
8
9
1
Max
14
24
2
1
VCCQ=1.65-2.0V
VCC=2.5-3.6V
Min
10
10
27
29
1
1
7
7
8
8
9
3
t
REC
t
HIZ
(OE)
Mobile DiskOnChip P3
(D)
Max
25
14
93-SR-009-8L
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns