DS3070W-100# Maxim Integrated Products, DS3070W-100# Datasheet

IC NVSRAM 16MBIT 100NS 256BGA

DS3070W-100#

Manufacturer Part Number
DS3070W-100#
Description
IC NVSRAM 16MBIT 100NS 256BGA
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS3070W-100#

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
16M (2M x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DS3070W-100#
Manufacturer:
Maxim Integrated
Quantity:
10 000
The DS3070W consists of a static RAM, a nonvolatile
(NV) controller, a year 2000-compliant real-time clock
(RTC), and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a sur-
face-mount module with a 256-ball BGA footprint.
Whenever V
the ML battery, powers the clock and SRAM from the
external power source, and allows the contents of the
clock registers or SRAM to be modified. When V
powered down or out-of-tolerance, the controller write-
protects the memory contents and powers the clock
and SRAM from the battery. The DS3070W also con-
tains a power-supply monitor output (RST), as well as a
user-programmable interrupt output (IRQ/FT).
RAID Systems and Servers
POS Terminals
Industrial Controllers
Data-Acquisition Systems
Rev 1; 10/06
#Denotes a RoHS-compliant device that may include lead that is exempt under the RoHS requirements.
Pin Configuration appears at end of data sheet.
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
DS3070W-100#
PART
CC
3.3V Single-Piece 16Mb Nonvolatile SRAM
is applied to the module, it recharges
-40°C to +85°C
TEMP RANGE
MICROPROCESSOR
General Description
OR DSP
ADDRESS
DATA
Gaming
Fire Alarms
PLCs
Routers/Switches
INT
INT
WR
RD
CS
CE
Applications
______________________________________________ Maxim Integrated Products
256-ball 27mm x 27mm BGA Module
PIN-PACKAGE
CC
is
21 BITS
8 BITS
o Single-Piece, Reflowable, 27mm x 27mm BGA
o Internal Manganese Lithium Battery and Charger
o Integrated Real-Time Clock
o Unconditionally Write-Protects the Clock and
o Automatically Switches to Battery Supply when
o Reset Output can be Used as a CPU Supervisor
o Interrupt Output can be Used as a CPU Watchdog
o Industrial Temperature Range (-40°C to +85°C)
o UL Recognized
Package Footprint
SRAM when V
V
Timer
CC
Power Failures Occur
Typical Operating Circuit
CC
CE
DQ0–7
A0–20
IRQ/FT
WE
OE
CS
RST
SPEED
is Out-of-Tolerance
100ns
Ordering Information
DS3070W
NV SRAM
2048k x 8
AND RTC
with Clock
SUPPLY VOLTAGE
3.3V ±0.3V
Features
1

Related parts for DS3070W-100#

DS3070W-100# Summary of contents

Page 1

... RAID Systems and Servers POS Terminals Industrial Controllers Data-Acquisition Systems PART TEMP RANGE DS3070W-100# -40°C to +85°C #Denotes a RoHS-compliant device that may include lead that is exempt under the RoHS requirements. MICROPROCESSOR OR DSP DATA ADDRESS Pin Configuration appears at end of data sheet. ...

Page 2

Single-Piece 16Mb Nonvolatile SRAM with Clock ABSOLUTE MAXIMUM RATINGS Voltage Range on Any Pin Relative to Ground......-0.3V to +4.6V Operating Temperature Range ...........................-40°C to +85°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the ...

Page 3

... (Note 4) WR1 t (Note 5) WR2 t (Note 2) ODW t (Note 2) OEW t (Note (Note 4) DH1 t (Note 5) DH2 t CCS CONDITIONS t (Note REC t (Note 1) RPD t (Note 1) RPU _____________________________________________________________________ with Clock DS3070W-100 UNITS MIN MAX 100 ns 100 100 100 MIN TYP MAX UNITS 1.5 µs 150 µs 150 µ ...

Page 4

Single-Piece 16Mb Nonvolatile SRAM with Clock DATA RETENTION (T = +25°C.) A PARAMETER SYMBOL Expected Data-Retention Time (Per Charge) AC TEST CONDITIONS Input Pulse Levels: Input Pulse Rise and Fall Times: Input and Output Timing Reference Level: Output Load: ...

Page 5

Single-Piece 16Mb Nonvolatile SRAM ADDRESSES OUT (SEE NOTE 9 ACC OEC COE t ...

Page 6

Single-Piece 16Mb Nonvolatile SRAM with Clock ADDRESSES OUT D IN (SEE NOTES 10–13.) ADDRESSES OUT D IN (SEE NOTES 10–13.) 6 ...

Page 7

Single-Piece 16Mb Nonvolatile SRAM 2. CE, WE AND CS BACKUP CURRENT SUPPLIED FROM LITHIUM BATTERY RST (SEE NOTES 1, 7 3.3V +25°C, unless otherwise noted.) CC ...

Page 8

Single-Piece 16Mb Nonvolatile SRAM with Clock (V = 3.3V +25°C, unless otherwise noted PERCENT CHANGE CHARGE vs. TEMPERATURE 1 3.3V BAT CHARGE 0.5 0 -0.5 -1.0 -40 -15 ...

Page 9

Single-Piece 16Mb Nonvolatile SRAM BALLS NAME A1, A2, A3, A4 GND Ground Interrupt/Frequency Test IRQ/FT B1, B2, B3, B4 Output C1, C2, C3, C4 A15 Address Input 15 D1, D2, D3, D4 A16 Address Input 16 RST E1, E2, ...

Page 10

... SW ML BATTERY-CHARGING/SHORTING GND PROTECTION CIRCUITRY (U.L. RECOGNIZED A0–A20 10 ____________________________________________________________________ 32.768kHz CS A0-A3 REAL-TIME CLOCK WE OE DELAY TIMING CIRCUITRY CHARGER REDUNDANT LOGIC REDUNDANT CURRENT-LIMITING SERIES FET RESISTOR Functional Diagram IRQ/FT RST UNINTERRUPTED POWER SUPPLY FOR THE SRAM AND RTC SRAM DQ0–7 WE DS3070W ...

Page 11

... Single-Piece 16Mb Nonvolatile SRAM Detailed Description The DS3070W is a 16Mb (2048k x 8 bits) fully static, NV memory similar in function and organization to the DS1270W NV SRAM, but also containing an RTC and rechargeable ML battery. The DS3070W NV SRAM con- stantly monitors V for an out-of-tolerance condition. CC When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption ...

Page 12

... BMB0–BMB4 = Watchdog multiplier bits. RB0, RB1 = Watchdog resolution bits. 12 ____________________________________________________________________ The DS3070W executes an SRAM write cycle whenever CS is inactive (high) and the CE and WE signals are active (low) after address inputs are stable. The later- occurring falling edge determines the start of the write cycle ...

Page 13

... The alarm can be programmed to activate on a specific day of the month or repeat every day, hour, minute, or second. It can also be programmed to go off while the DS3070W is in the Data Retention Mode to serve as a system wake-up. Alarm mask bits AM1 to AM4 control the alarm mode (see Table 3). Configurations not listed in the table will default to the once-per-second mode to notify the user of an incorrect alarm setting ...

Page 14

Single-Piece 16Mb Nonvolatile SRAM with Clock Table 3. Alarm Mask Bits AM4 AM3 AM2 When the RTC register values match alarm register set- tings, ...

Page 15

Single-Piece 16Mb Nonvolatile SRAM A0–A3 IRQ/FT Figure 2. Prevent Accidental Clearing of IRQ Waveforms V CC ABE HIGH IRQ/FT IMPEDANCE Figure 3. Battery Back-up Mode Alarm Waveforms INADVERTENT WRITE OR READ OF ...

Page 16

... The watchdog function is automatically dis- abled upon power-up and the WATCHDOG register is cleared to 00h. The DS3070W modules are trimmed at the factory to an accuracy of 1 minute per month at +25°C. Power-On Default States Upon each application of power to the device, the fol- lowing register bits are automatically set to 0: WDS = 0, BMB0– ...

Page 17

... Once the battery is charged its lifetime depends primarily on the V The DS3070W can maintain data from a single, initial charge for years. Once recharged, this deep- discharge cycle can be repeated for times, producing a worst-case service life of 40 years. More typical duty cycles are of shorter duration, enabling the DS3070W to be charged hundreds of times, and extending the service life well beyond 40 years ...

Page 18

... Revision History Pages changed at Rev1 4,18 DS3070W BGA modules are recognized by Underwriters Laboratory (UL) under file E99151. Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. ...

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