ICE3B1065 Infineon Technologies, ICE3B1065 Datasheet - Page 13

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ICE3B1065

Manufacturer Part Number
ICE3B1065
Description
IC OFFLINE CTRLR SMPS OTP 8DIP
Manufacturer
Infineon Technologies
Series
CoolSET®F3r
Datasheet

Specifications of ICE3B1065

Output Isolation
Isolated
Frequency Range
61 ~ 73kHz
Voltage - Input
8.5 ~ 22 V
Voltage - Output
650V
Power (watts)
32W
Operating Temperature
-40°C ~ 150°C
Package / Case
8-DIP (0.300", 7.62mm)
Number Of Outputs
1
Duty Cycle (max)
77 %
Output Voltage
650 V
Output Current
1000 mA
Mounting Style
Through Hole
Switching Frequency
71 KHz
Maximum Operating Temperature
+ 150 C
Fall Time
30 ns
Minimum Operating Temperature
- 40 C
Rise Time
30 ns
Synchronous Pin
No
Topology
Flyback
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ICE3B1065X
ICE3B1065XK
SP000015076

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3.4
Figure 9
3.4.1
The oscillator generates a fixed frequency. The switching
frequency of ICE3Axx65x is f
ICE3Bxx65x f
current source and current sink which determine the
frequency are integrated. The charging and discharging
current of the implemented oscillator capacitor are internally
trimmed, in order to achieve a very accurate switching
frequency. The ratio of controlled charge to discharge
current is adjusted to reach a maximum duty cycle limitation
of D
3.4.2
The oscillator clock output provides a set pulse to the PWM-
Latch when initiating the internal CoolMOS™ conduction.
After setting the PWM-Latch can be reset by the PWM
comparator, the Soft Start comparator or the Current-Limit
comparator. In case of resetting, the driver is shut down
immediately.
Version 2.0
Comparator
Comparator
Soft Start
max
Current
Limiting
PWM
Duty Cycle
=0.72.
Oscillator
Clock
max
PWM Section
Oscillator
PWM-Latch FF1
OSC
PWM Section
= 67kHz. A resistor, a capacitor and a
0.72
G8
1
R
S
OSC
FF1
Q
= 100kHz and for
CoolMOS™
Gate Driver
Internal
PWM Section
G9
Gate
&
13
3.4.3
Figure 10
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. This is done by reducing the
switch on slope when exceeding the internal CoolMOS™
threshold. This is achieved by a slope control of the rising
edge at the driver’s output (see Figure 11).
Figure 11
Thus the leading switch on spike is minimized. When the
integrated CoolMOS™ is switched off, the falling shape of
the driver is slowed down when reaching 2V to prevent an
overshoot below ground. Furthermore the driver circuit is
designed to eliminate cross conduction of the output stage.
During powerup when VCC is below the undervoltage
lockout threshold V
low to disable power transfer to the seconding side.
Gate Driver
PWM-Latch
(internal) V
5V
Gate Driver
1
Gate
VCC
Gate Driver
Gate Rising Slope
VCCoff
, the output of the Gate Driver is
Functional Description
ca. t = 130ns
CoolSET™-F3
Gate
CoolMOS™
24 Aug 2005
t

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