MCP73833-FCI/UN Microchip Technology, MCP73833-FCI/UN Datasheet - Page 4

• Manufacturer Part Number: MCP73833-FCI/UN
• Description: IC LI-ION/LI-POLY CTRLR 10MSOP
• Manufacturer: Microchip Technology

Specifications of MCP73833-FCI/UN

• Battery Type: Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
• Function: Charge Management
• Voltage - Supply: 3.75 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP (0.118", 3.00mm Width)
• Input Voltage: 6V
• Battery Charge Voltage: 4.2V
• Charge Current Max: 1A
• Battery Ic Case Style: MSOP
• No. Of Pins: 10
• No. Of Series Cells: 1
• Output Voltage: 4.2 V, 4.35 V, 4.4 V, 4.5 V
• Output Current: 1200 mA
• Operating Supply Voltage: 3.75 V to 6 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: MCP73833EV - BOARD EVAL FOR MCP73833
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP73833/4
DC CHARACTERISTICS (CONTINUED)
DS22005B-page 4
Electrical Specifications: Unless otherwise specified, all limits apply for V
Typical values are at +25°C, V
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage Threshold
Precondition Hysteresis
Charge Termination
Charge Termination Current Ratio
Automatic Recharge
Recharge Voltage Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage Current
Status Indicators - STAT1, STAT2, PG
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
Charge Impedance Range
Standy Impedance
Thermistor Bias
Thermistor Current Source
Thermistor Comparator
Upper Trip Threshold
Upper Trip Point Hysteresis
Lower Trip Threshold
Lower Trip Point Hysteresis
System Test (LDO) Mode
Input High Voltage Level
THERM Input Sink Current
Bypass Capacitance
Ratio
Parameters
DD
= [V
REG
V
V
I
I
I
PREG
TERM
DISCHARGE
PTH
RTH
(Typical)+1.0V]
V
V
R
R
I
R
V
THERM
C
Sym
I
I
T1HYS
T2HYS
V
DSON
SINK
PROG
PROG
V
V
SINK
PHYS
V
I
LK
BAT
/ V
/ V
OL
T1
T2
IH
/ I
/ I
REG
REG
REG
REG
(V
0.235
3.75
1.20
DD
Min
7.5
5.6
7.5
4.7
15
30
64
69
15
70
47
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
3
1
-0.1)
66.5
71.5
94.0
96.5
0.15
0.25
0.15
0.01
1.23
0.25
Typ
-5.5
100
100
300
7.5
0.4
-50
10
20
40
10
20
15
50
50
—
—
—
—
—
5
6
DD
= [V
0.265
Max
12.5
6.25
12.5
1.26
200
-15
9.4
25
50
70
75
25
25
20
53
20
—
—
—
—
—
—
—
—
—
—
REG
2
2
2
1
1
(Typical)+0.3V] to 6V, T
Units
mΩ
mV
mA
mV
mV
kΩ
kΩ
µA
µA
µA
µA
µA
µA
µA
µF
µF
%
%
%
%
%
%
%
%
%
%
%
%
V
V
V
V
© 2009 Microchip Technology Inc.
PROG = 1.0 kΩ to 10 kΩ
T
V
V
PROG = 1.0 kΩ to 10 kΩ
T
V
V
T
PROG Floating
V
V
Charge Complete
I
High Impedance, 6V on pin
Minimum Impedance for
Standby
2 kΩ < R
V
V
Stand-by or system test mode
I
I
SINK
OUT
OUT
A
A
J
BAT
BAT
BAT
DD
DD
DD
THERM
THERM
=-5°C to +55°C
=-5°C to +55°C
= 105°C
= 3.75V
< V
< V
< 250 mA
> 250 mA
Low-to-High
High-to-Low
High-to-Low
= 4 mA
BAT
STOP
A
Low-to-High
High-to-Low
THERM
Conditions
=-40°C to 85°C.
< 50 kΩ