LTC4360ISC8-1#TRPBF Linear Technology, LTC4360ISC8-1#TRPBF Datasheet
LTC4360ISC8-1#TRPBF
Specifications of LTC4360ISC8-1#TRPBF
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LTC4360ISC8-1#TRPBF Summary of contents
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... Cell/Smart Phones n MP3/MP4 Players n Digital Cameras n L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and ThinSOT, PowerPath, How Swap and No R are trademarks of Linear Technology SENSE Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION ...
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... TAPE AND REEL LTC4360CSC8-1#TRMPBF LTC4360CSC8-1#TRPBF LTC4360CSC8-2#TRMPBF LTC4360CSC8-2#TRPBF LTC4360ISC8-1#TRMPBF LTC4360ISC8-1#TRPBF LTC4360ISC8-2#TRMPBF LTC4360ISC8-2#TRPBF TRM = 500 pieces. *Temperature grades are identified by a label on the shipping container. Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on lead based finish parts. ...
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ELECTRICAL CHARACTERISTICS temperature range, otherwise specifications are at T SYMBOL PARAMETER Supplies V Input Voltage Range IN V Input Undervoltage Lockout IN(UVL) I Input Supply Current IN Thresholds V IN Pin Overvoltage Threshold IN(OV) ∆V Overvoltage Hysteresis OV External Gate ...
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LTC4360-1/LTC4360-2 TYPICAL PERFORMANCE CHARACTERISTICS T = 25° 5V (LTC4360-1) unless otherwise noted Input Supply Current vs Input Voltage 1000 LTC4360 0V, LTC4360-2) ON 100 V = 2.5V ON (LTC4360-1) 10 ...
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PIN FUNCTIONS GATE: Gate Drive for External N-Channel MOSFET. An internal charge pump provides a 10µA pull-up current to charge the gate of the external N-channel MOSFET. An additional ramp circuit limits the GATE ramp rate when turning on to ...
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LTC4360-1/LTC4360-2 OPERATION Mobile devices like cell phones and MP3/MP4 players have highly integrated subsystems fabricated from deep submi- cron CMOS processes. The small form factor is accompanied by low absolute maximum voltage ratings. The sensitive electronics are susceptible to damage ...
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APPLICATIONS INFORMATION The GATE ramp rate is limited to 3V/ms similar rate which results in an inrush current into the load capacitor C of: OUT dV GATE • INRUSH OUT OUT dt The ...
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LTC4360-1/LTC4360-2 APPLICATIONS INFORMATION MOSFET Configurations and Selection The LTC4360 can be used with various external MOSFET configurations (see Figure 3). The simplest configuration is a single N-channel MOSFET. It has the lowest R voltage drop and is thus the most ...
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APPLICATIONS INFORMATION L and R form an LC tank circuit with any capacitance IN. If the wall adaptor is powered up first, plugging the wall adaptor output to IN does the equivalent of applying a voltage step ...
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LTC4360-1/LTC4360-2 APPLICATIONS INFORMATION As the IN pin can withstand up to 80V, a high voltage N- channel MOSFET can be used to protect the system against rugged abuse from high transient or DC voltages up to the BV of the ...
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APPLICATIONS INFORMATION with the USB input already live. As shown in Figure 9, a large current can build charge the N-channel MOSFET shuts off, the energy stored dumped into C ...
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LTC4360-1/LTC4360-2 PACKAGE DESCRIPTION 0.30 0.50 MAX REF 2.8 BSC 1.8 REF RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.10 – 0.40 GAUGE PLANE 0.15 BSC 0.26 – 0.46 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. ...
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... Revised GATE Control in Applications Information section Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. ...
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... Supplies and Reverse Current FDC6561AN OUT 10µF GATE OUT 5V R1 LTC4360 LN1351CTR GATEP PWRGD GND 436012 TA03 : 3µ 2.0V to 45V 0.6V to 39.5V OUT : 3µ 1.6V to 20V 0.6V to 19.5V OUT LT 0111 REV A • PRINTED IN USA LINEAR TECHNOLOGY CORPORA TION 2010 V OUT 5V 0.5A 436012fa ...