TC4429COA Microchip Technology, TC4429COA Datasheet - Page 4

• Manufacturer Part Number: TC4429COA
• Description: IC MOSFET DRIVER 6A INV 8SOIC
• Manufacturer: Microchip Technology
• Type: Microcontrollerr

Specifications of TC4429COA

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 55ns
• Current - Peak: 6A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Device Type: MOSFET
• Module Configuration: Low Side
• Peak Output Current: 6A
• Output Resistance: 2.1ohm
• Input Delay: 55ns
• Output Delay: 55ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: SOIC
• Rise Time: 35 ns
• Fall Time: 35 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 470 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TC4420/TC4429
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
DS21419C-page 4
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
Input
Logic ‘1’, High Input
Voltage
Logic ‘0’, Low Input Voltage
Input Voltage Range
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (I)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-CERDIP
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Parameters
Switching times ensured by design.
Parameters
Sym
R
V
R
V
V
V
V
V
t
t
I
t
I
t
D1
D2
IN
OH
OH
DD
OL
OL
R
F
S
IH
IN
IL
V
DD
Sym
Min
–10
2.4
4.5
T
T
T
T
T
– 0.025
T
—
–5
—
—
—
—
—
—
—
—
—
JA
JA
JA
JA
JA
A
A
A
A
A
J
Min
–25
–40
–40
–65
—
—
—
—
—
—
0.45
0
Typ
2.3
—
32
34
50
65
60
—
—
—
—
—
—
3
V
33.2
Typ
150
125
155
DD
71
—
—
—
—
—
—
0.025
Max
+10
100
100
400
0.8
—
—
60
60
18
5
5
3
+ 0.3
+125
+150
+150
Max
+70
+85
+85
—
—
—
—
—
Units
mA
µA
µA
ns
ns
ns
ns
V
V
V
V
V
V
Units
0V V
DC TEST
DC TEST
I
I
Figure 4-1, C
Figure 4-1, C
Figure 4-1
Figure 4-1
V
V
°C/W
°C/W
°C/W
°C/W
°C/W
OUT
OUT
°C
°C
°C
°C
°C
°C
IN
IN
= 3V
= 0V
= 10 mA, V
= 10 mA, V
V
 2004 Microchip Technology Inc.
IN
DD
with vias to ground plane.
Typical four-layer board
V
18V.
Conditions
DD
L
L
= 2,500 pF
= 2,500 pF
Conditions
DD
DD
V
= 18V
= 18V
DD
18V.