TC4451VPA Microchip Technology, TC4451VPA Datasheet - Page 3

• Manufacturer Part Number: TC4451VPA
• Description: IC MOSFET DVR 12A HS 8DIP
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of TC4451VPA

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 44ns
• Current - Peak: 13A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Device Type: Low Side
• Module Configuration: Low Side
• Peak Output Current: 13A
• Output Resistance: 1ohm
• Input Delay: 44ns
• Output Delay: 44ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: DIP
• Rise Time: 40 ns
• Fall Time: 40 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 0.2 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
Input Current (V
DC CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
3: Valid for AT and MF packages only. T
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Tested during characterization, not production tested.
IN
> V
DD
)................................... 50 mA
DD
+ 0.3V) to (GND – 5V)
Sym
V
R
I
V
V
R
V
V
I
V
I
REV
t
t
I
t
PK
DC
t
D1
D2
I
IN
OH
OH
DD
OL
OL
R
F
S
IH
IN
IL
V
DD
Min
–10
2.4
2.6
4.5
– 0.025
–5
—
—
—
—
—
—
—
—
—
—
—
—
A
A
= +25°C.
= +25°C with 4.5V
>1.5
Typ
140
1.5
1.3
1.0
0.9
13
30
32
44
44
40
—
—
—
—
—
—
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
V
DD
0.025
Max
18.0
+10
200
100
0.8
1.5
1.5
—
—
—
40
40
52
52
—
—
+ 0.3
Units
TC4451/TC4452
μA
μA
μA
V
ns
ns
ns
ns
V
V
V
V
V
A
A
A
V
DD
0V
DC Test
DC Test
I
I
V
10V V
Duty cycle
Figure 4-1, C
Figure 4-1, C
Figure 4-1, C
Figure 4-1, C
V
V
OUT
OUT
18V.
DD
IN
IN
= 3V
= 0V
= 18V
V
= 10 mA, V
= 10 mA, V
IN
DD
V
Conditions
DD
18V (Note 2, Note 3)
2%, t
L
L
L
L
= 15,000 pF
= 15,000 pF
= 15,000 pF
= 15,000 pF
DD
DD
DS21987A-page 3
= 18V
= 18V
300 μs