LT1910ES8#PBF Linear Technology, LT1910ES8#PBF Datasheet - Page 4

• Manufacturer Part Number: LT1910ES8#PBF
• Description: IC MOSFET DRIVER HIGH-SIDE 8SOIC
• Manufacturer: Linear Technology

Specifications of LT1910ES8#PBF

• Configuration: High-Side
• Input Type: Non-Inverting
• Delay Time: 220µs
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 8 V ~ 48 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak: -
• High Side Voltage - Max (bootstrap): -

LT1910
TYPICAL PERFORMANCE CHARACTERISTICS
4
200
180
160
140
120
100
100
0.1
80
60
40
20
20
18
10
10
16
14
12
0
8
1
–50
–50
0
Input Current vs Temperature
Timer Charge Current
vs Tempeature
MOSFET Gate Drive Current
vs V
V
IN
= V
–25
–25
2
GATE
T
= 2V
4
– V
0
0
TEMPERATURE (°C)
TEMPERATURE (°C)
V
+
V
+
= 8V
6
GATE
25
25
V
V
IN
IN
– V
8
= 5V
= 2V
V
50
+
50
+
= 12V V
(V)
10
75
75
12
T
+
A
≥ 24V
100
100
= 25°C
14
1910 G04
1910 G07
1910 G10
125
125
16
3.2
3.1
3.0
2.9
2.8
2.7
2.6
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3.0
90
85
80
75
70
65
60
55
40
50
45
–50
–50
–50
Timer Threshold Voltage
vs Temperature
Drain Sense Threshold Voltage
vs Temperature
Fault Threshold Voltage
vs Temperature
V
V
V
I
F
IN
+
IN
= 1mA
= 24V
FAULT LOW THRESHOLD
= 2V
= 2V
–25
–25
–25
0
0
0
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
25
25
25
FAULT HIGH THRESHOLD
50
50
50
75
75
75
100
100
100
1910 G05
1910 G08
1910 G11
125
125
125
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
3.8
3.7
3.6
3.5
3.4
3.3
3.2
16
14
12
10
8
6
4
2
0
0
–50
–50
0
Timer Clamp Voltage
vs Temperature
MOSFET Gate Voltage Above V
(V
Fault Output Low Voltage
vs Temperature
V
I
F
IN
GATE
= 1mA
5
≤ 0.8V
–25
–25
10
– V
T
SUPPLY VOLTAGE (V)
15
0
0
TEMPERATURE (°C)
TEMPERATURE ( C)
A
+
) vs Supply Voltage
= 25°C
20
25
25
25
50
50
30
T
T
A
A
35
75
75
= 125°C
= –40°C
40
100
LTC1266 • F04
100
1910 G012
45
1910 G06
+
1910fa
125
50
125