LT1910ES8#PBF Linear Technology, LT1910ES8#PBF Datasheet - Page 5

• Manufacturer Part Number: LT1910ES8#PBF
• Description: IC MOSFET DRIVER HIGH-SIDE 8SOIC
• Manufacturer: Linear Technology

Specifications of LT1910ES8#PBF

• Configuration: High-Side
• Input Type: Non-Inverting
• Delay Time: 220µs
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 8 V ~ 48 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak: -
• High Side Voltage - Max (bootstrap): -

TYPICAL PERFORMANCE CHARACTERISTICS
PIN FUNCTIONS
GND (Pin 1): Common Ground.
TIMER (Pin 2): A timing capacitor, C
pin to ground sets the restart time following overcurrent
detection. Upon detection of an overcurrent condition, C
is rapidly discharged to less than 1V and then recharged
by a 14μA nominal current source back to the 2.9V timer
threshold, whereupon the restart is attempted. When-
ever TIMER pulls below 2.9V, the GATE pin pulls low to
turn off the external switch. This cycle repeats until the
overcurrent condition goes away and the switch restarts
successfully. During normal operation the pin clamps at
3.5V nominal.
FAULT (Pin 3): The FAULT pin monitors the TIMER pin
voltage and indicates the overcurrent condition. Whenever
the TIMER pin is pulled below 3.3V at the onset of a cur-
rent limit condition, the FAULT pin pulls active LOW. The
FAULT pin resets HIGH immediately when the TIMER pin
ramps above 3.4V during autorestart. The FAULT pin is an
open-collector output, thus requiring an external pull-up
resistor and is intended for logic interface. The resistor
should be selected with a typical 1mA pull-up at low status
and less than 2mA under worst-case conditions.
IN (Pin 4): The IN pin threshold is TTL/CMOS compatible
and has approximately 200mV of hysteresis. When the
IN pin is pulled active HIGH above 2V, an internal charge
400
350
150
100
300
250
200
–50
Turn-On Time vs Temperature
V
V
C
+
GATE
GATE
= 24V
–25
= 32V
= 1nF
0
TEMPERATURE ( C)
25
50
75
100
1910 G13
125
T
, from the TIMER
100
90
80
70
60
50
40
30
20
10
0
–50
Turn-Off Time vs Temperature
V
V
C
+
GATE
GATE
= 24V
–25
= 2V
= 1nF
0
TEMPERATURE ( C)
T
CURRENT LIMIT
NORMAL
25
pump is activated to pull up the GATE pin. The IN pin can
be pulled as high as 15V regardless of whether the sup-
ply is on or off. If the IN pin is left open, an internal 75k
pull-down resistor pulls the pin below 0.8V to ensure that
the GATE pin is inactive LOW.
GATE (Pin 5): The GATE pin drives the power MOSFET
gate. When the IN pin is greater than 2V, the GATE pin is
pumped approximately 12V above the supply. It has rela-
tively high impedance (the equivalence of a few hundred
kΩ) when pumped above the rail. Care should be taken
to minimize any loading by parasitic resistance to ground
or supply. The GATE pin pulls LOW when the TIMER pin
falls below 2.9V.
SENSE (Pin 6): The SENSE pin connects to the input of
a supply-referenced comparator with a 65mV nominal
offset. When the SENSE pin is taken more than 65mV
below supply, the MOSFET gate is driven LOW and the
timing capacitor is discharged. The SENSE pin threshold
has a 0.33%/°C temperature coeffi cient (TC), which closely
matches the TC of the drain-sense resistor formed from
the copper trace of the PCB.
For loads requiring high inrush current, an RC timing delay
can be added between the drain-sense resistor and the
SENSE pin to ensure that the current-sense comparator
does not false trigger during start-up (see Applications
50
75
100
1910 G014
125
1000
100
10
–50
Automatic Restart Period
vs Temperature
V
+
–30
= 24V
–10 10
TEMPERATURE (°C)
C
30
C
C
T
C
T
T
T
= 0.33μF
= 0.1μF
= 3.3μF
= 1μF
50
LT1910
70
90
110
1910 G15
1910fa
5
130