L6393DTR STMicroelectronics, L6393DTR Datasheet - Page 14

• Manufacturer Part Number: L6393DTR
• Description: IC GATE DRIVER HALF BRDGE SOIC14
• Manufacturer: STMicroelectronics
• Type: High Side/Low Sider

Specifications of L6393DTR

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 125ns
• Current - Peak: 270mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Product: Half-Bridge Drivers
• Rise Time: 75 ns
• Fall Time: 35 ns
• Propagation Delay Time: 125 ns
• Supply Voltage (max): 21 V
• Supply Voltage (min): - 0.3 V
• Supply Current: 270 mA
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Maximum Turn-off Delay Time: 200 ns
• Maximum Turn-on Delay Time: 200 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Output Voltage: 580 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8323-2

Bootstrap driver
8
8.1
14/19
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with diode in series, as shown in
Figure
C
To choose the proper C
capacitor. This capacitor C
The ratio between the capacitors C
loss. It has to be:
e.g.: if Q
be 300 mV.
If HVG has to be supplied for a long time, the C
the leakage and quiescent losses.
e.g.: HVG steady state consumption is lower than 200 µA, so if HVG T
has to supply 1 µC to C
The internal bootstrap driver gives a great advantage: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if V
LVG is on. The charging time (T
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS R
(typical value: 120 Ω). At low frequency this drop can be neglected. Anyway increasing the
frequency it must be taken in to account.
BOOT
7.b. An internal charge pump
gate
selection and charging
is 30 nC and V
BOOT
EXT
EXT
. This charge on a 1 µF capacitor means a voltage drop of 1 V.
gate
value the external MOS can be seen as an equivalent
Doc ID 14497 Rev 4
is related to the MOS total gate charge:
is 10 V, C
charge
OUT
EXT
is close to GND (or lower) and in the meanwhile the
(Figure
) of the C
C
C
and C
BOOT
EXT
EXT
7.b) provides the DMOS driving voltage.
=
BOOT
is 3 nF. With C
»
BOOT
BOOT
Q
-------------- -
V
C
gate
gate
EXT
is proportional to the cyclical voltage
(Figure
is the time in which both conditions are
selection has to take into account also
7.a). In the L6393 a patented
BOOT
= 100 nF the drop would
DSon
ON
is 5 ms, C
BOOT
L6393