L6390D STMicroelectronics, L6390D Datasheet

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L6390D

Manufacturer Part Number
L6390D
Description
IC DRIVER HV HI/LOW SIDE SOIC-16
Manufacturer
STMicroelectronics
Type
High Side/Low Sider
Datasheet

Specifications of L6390D

Configuration
Half Bridge
Input Type
Inverting and Non-Inverting
Delay Time
125ns
Current - Peak
290mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
12.5 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Product
H-Bridge Drivers
Rise Time
120 ns
Fall Time
70 ns
Supply Voltage (min)
12.5 V
Supply Current
290 mA
Maximum Power Dissipation
800 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
For Use With
497-10543 - BOARD EVAL L6390/STD5N52U497-8404 - BOARD EVAL L6390/STD5NK52ZD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Features
Applications
Table 1.
August 2010
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature
range
Driver current capability:
– 290 mA source,
– 430 mA sink
Switching times 75/35 nsec rise/fall with
1 nF load
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Integrated bootstrap diode
Operational amplifier for advanced current
sensing
Comparator for fault protections
Smart shut down function
Adjustable dead-time
Interlocking function
Compact and simplified layout
Bill of material reduction
Effective fault protection
Flexible, easy and fast design
Motor driver for home appliances, factory
automation, industrial drives.
HID ballasts, power supply units.
Order codes
L6390DTR
Device summary
L6390N
L6390D
Doc ID 14493 Rev 5
High-voltage high and low side driver
Package
DIP-16
SO-16
SO-16
Description
The L6390 is a high-voltage device manufactured
with the BCD “OFF-LINE” technology. It is a single
chip half-bridge gate driver for N-channel power
MOSFET or IGBT.
The high side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
are CMOS/TTL compatible down to 3.3 V for easy
interfacing microcontroller/DSP.
The IC embeds an operational amplifier suitable
for advanced current sensing in applications such
as field oriented motor control.
An integrated comparator is available for
protections against overcurrent, overtemperature,
etc.
SO-16
Tape and reel
Packaging
Tube
Tube
DIP-16
L6390
www.st.com
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L6390D Summary of contents

Page 1

... HID ballasts, power supply units. Table 1. Device summary Order codes L6390N L6390D L6390DTR August 2010 High-voltage high and low side driver SO-16 Description The L6390 is a high-voltage device manufactured with the BCD “OFF-LINE” technology single chip half-bridge gate driver for N-channel power MOSFET or IGBT ...

Page 2

Contents Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

L6390 1 Block diagram Figure 1. Block diagram 4 VCC 3 HIN 5V 1 LIN 2 SD/OD 8 GND OPOUT BOOTSTRAP DRIVER from LVG UV DETECTION LOGIC SHOOT THROUGH PREVENTION SD LATCH SMART SD DEAD TIME Doc ...

Page 4

Pin connection 2 Pin connection Figure 2. Pin connection (top view) Table 2. Pin description Pin n # Pin name 1 2 SD/ OPOUT LVG 12 HVG 16 ...

Page 5

L6390 3 Truth table Table 3. Truth table Note: X: don't care Input LIN HIN Doc ID 14493 Rev 5 Truth table Output LVG ...

Page 6

Electrical data 4 Electrical data 4.1 Absolute maximum ratings Table 4. Absolute maximum rating Symbol V Supply voltage cc V Output voltage out V Bootstrap voltage boot V High side gate output voltage hvg V Low side gate output voltage ...

Page 7

L6390 4.3 Recommended operating conditions Table 6. Recommended operating conditions Symbol Pin (1) V 16- out boot out 2. LVG off. Vcc = ...

Page 8

Electrical characteristics 5 Electrical characteristics 5.1 AC operation Table 7. AC operation electrical characteristics (V Symbol Pin Parameter High/low side driver turn- propagation delay High/low side driver turn-off t off propagation delay ...

Page 9

L6390 Figure 3. Timing HVG LVG/HVG Figure 4. Typical dead time vs. DT resistor value 50% LIN t r 90% LVG 10 50% HIN t r 90% 10 50 Doc ID 14493 ...

Page 10

Electrical characteristics 5.2 DC operation Table 8. DC operation electrical characteristics (V Symbol Pin Parameter Low supply voltage section hysteresis cc_hys turn ON threshold cc_thON turn OFF threshold cc_thOFF ...

Page 11

L6390 Table 8. DC operation electrical characteristics (V Symbol Pin Parameter V Low logic level voltage High logic level voltage Single input voltage il_S HIN logic “1” input bias I HINh ...

Page 12

Electrical characteristics Table 9. OPAMP characteristics (V Symbol Pin Parameter V Input offset voltage io I Input offset current Input bias current ib Input common mode voltage V icm range V Low level output voltage OL ...

Page 13

L6390 6 Waveforms definitions Figure 5. Dead time and interlocking waveforms definitions CONTROL SIGNAL EDGES OVERLAPPED: INTERLOCKING + DEAD TIME CONTROL SIGNALS EDGES SYNCHRONOUS (*): DEAD TIME CONTROL SIGNALS EDGES NOT OVERLAPPED, BUT INSIDE THE DEAD TIME: DEAD TIME CONTROL ...

Page 14

Smart shut down function 7 Smart shut down function L6390 integrates a comparator committed to the fault sensing function. The comparator has an internal voltage reference V input is available on pin 10. The comparator input can be connected to ...

Page 15

L6390 In common over-current protection architectures the comparator output is usually connected to the SD input and an RC network is connected to this SD/OD line in order to provide a mono-stable circuit, which implements a protection time that follows ...

Page 16

Typical application diagram 8 Typical application diagram Figure 7. Application diagram VCC + V CC FROM CONTROLLER HIN FROM CONTROLLER V BIAS FROM/TO CONTROLLER SD/OD GND OPOUT TO ADC 16/22 BOOTSTRAP DRIVER FLOATING STRUCTURE 4 from LVG UV DETECTION 3 ...

Page 17

L6390 9 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode integrated structure replaces the external diode realized by a high voltage ...

Page 18

Bootstrap driver Equation 3 where Q is the gate charge of the external power MOS, R gate bootstrap DMOS and T For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS ...

Page 19

L6390 10 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ...

Page 20

Package mechanical data Figure 10. SO-16 narrow mechanical data and package dimensions mm DIM. MIN. TYP 0.1 a2 REF. MIN. TYP. MAX. MIN 0. 0.35 b1 0.19 (1) ...

Page 21

L6390 11 Revision history Table 11. Document revision history Date 29-Feb-2008 09-Jul-2008 17-Sep-2008 17-Feb-2009 11-Aug-2010 Revision 1 First release Updated: Cover page, 2 Section 4 on page 6, 3 Updated test condition values on Updated Table 7 on page 4 ...

Page 22

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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