IR2112PBF International Rectifier, IR2112PBF Datasheet

no-image

IR2112PBF

Manufacturer Part Number
IR2112PBF
Description
IC MOSFET DVR HI/LO SIDE 14-DIP
Manufacturer
International Rectifier
Datasheet

Specifications of IR2112PBF

Configuration
High and Low Side, Independent
Input Type
Non-Inverting
Delay Time
125ns
Current - Peak
250mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Voltage, Supply
20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IR2112PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IR2112PBF
Quantity:
9 000
Features
www.irf.com
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
V
HIN
V
V
SD
LIN
CC
DD
SS
V
HIN
SD
LIN
V
DD
SS
COM
V
HO
LO
V
V
CC
B
S
HIGH AND LOW SIDE DRIVER
Product Summary
Packages
Delay Matching
t
on/off
14-Lead PDIP
V
OFFSET
V
I
O
OUT
+/-
IR2112 ( -1-2 )( S ) PbF
(typ.)
Data Sheet No. PD60026 revS
200 mA / 420 mA
16-Lead SOIC (wide body)
125 & 105 ns
up to 600V
600V max.
10 - 20V
30 ns
LOAD
TO
1

Related parts for IR2112PBF

IR2112PBF Summary of contents

Page 1

Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V ...

Page 2

IR2112 ( -1 PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ...

Page 3

Dynamic Electrical Characteristics 15V 1000 pF, T BIAS electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition t Turn-On Propagation Delay ...

Page 4

IR2112 ( -1 PbF Functional Block Diagram HIN SD LIN Lead Definitions Symbol Description V Logic supply DD HIN Logic input for high side gate driver output ...

Page 5

Lead Assignments 14 Lead PDIP IR2112 14 Lead PDIP w/o lead 4 IR2112-1 www.irf.com IR2112 ( -1 PbF 16 Lead SOIC (Wide Body) 14 Lead PDIP w/o leads 4 & 5 IR2112-2 Part Number IR2112S 5 ...

Page 6

IR2112 ( -1 PbF Figure 1. Input/Output Timing Diagram Figure 3. Switching Time Test Circuit 50 90% LO Figure 5. Shutdown Waveform Definitions 6 Figure 2. Floating Supply Voltage Transient Test Circuit 50% ...

Page 7

Max. 150 100 Typ -50 - Temperature Figure 7A. Turn-On Time vs. Temperature 400 300 Max. 200 Typ. 100 VDD Supply ...

Page 8

IR2112 ( -1 PbF 250 200 Max. 150 100 Typ -50 - Temperature (°C) Figure 9A. Shutdow n Time vs. Temperature 400 300 Max. 200 100 Typ ...

Page 9

Max Typ ...

Page 10

IR2112 ( -1 PbF 1 0.8 0 uppl y V otage (V ) Figure 14B. High Level Output vs. Voltage 1 ...

Page 11

Typ Floating S upply V oltage (V ) Figure 17B. V Supply Current vs. Voltage BS 300 250 200 150 100 ...

Page 12

IR2112 ( -1 PbF ...

Page 13

Max. 9 Typ. 8 Min -50 - Tem perature (°C) Figure 25. V Undervoltage (-) vs. Temperature CC 500 400 300 200 100 VBIAS Supply Voltage (V) Figure ...

Page 14

IR2112 ( -1 PbF 150 125 100 1E+2 1E+3 1E+4 Frequency (Hz) Figure 28. IR2112 T vs. Frequency (IRFBC20 15V GATE CC 150 125 100 75 ...

Page 15

Frequency (Hz) Figure 34. IR2112S T vs. Frequency (IRFBC40 15V GATE CC 0.0 -3.0 Typ. -6.0 -9.0 -12.0 -15 ...

Page 16

IR2112 ( -1 PbF Case outline 16 14-Lead PDIP 14-Lead PDIP w/o Lead 4 01-6010 01-3002 03 (MS-001AC) 01-6010 01-3008 02 (MS-001AC) www.irf.com ...

Page 17

Lead PDIP w/o Leads 4 & 5 www.irf.com IR2112 ( -1 PbF 16-Lead SOIC (wide body) 01-6015 01-3010 02 01 6015 01-3014 03 (MS-013AA) 17 ...

Page 18

... Identifier ? MARKING CODE P Lead Free Released Non-Lead Free Released 14-Lead PDIP IR2112 order IR2112PbF 14-Lead PDIP IR2112-1 order IR2112-1PbF 14-Lead PDIP IR2112-2 order IR2112-2PbF 16-Lead SOIC IR2112S order IR2112SPbF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 18 IRxxxxxx ...

Related keywords