Manufacturer Part NumberISL6594BCBZ-T
ISL6594BCBZ-T datasheet

Specifications of ISL6594BCBZ-T

ConfigurationHigh and Low Side, SynchronousInput TypePWM
Delay Time10.0nsCurrent - Peak1.25A
Number Of Configurations1Number Of Outputs2
High Side Voltage - Max (bootstrap)36VVoltage - Supply10.8 V ~ 13.2 V
Operating Temperature0°C ~ 85°CMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Page 1
Page 2
Page 3
Page 4
Page 5
Page 6
Page 7
Page 8
Page 9
Page 10
Page 1/10

Download datasheet (237Kb)Embed
Data Sheet
Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6594A and ISL6594B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with the
ISL6592 Digital Multi-Phase Buck PWM controller and
N-Channel MOSFETs form a complete core-voltage
regulator solution for advanced microprocessors.
The ISL6594A drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6594B drives both upper and lower gates over
a range of 5V to 12V. This drive-voltage provides the
flexibility necessary to optimize applications involving
trade-offs between gate charge and conduction losses.
An adaptive zero shoot-through protection is integrated to
prevent both the upper and lower MOSFETs from conducting
simultaneously and to minimize the dead time. These
products add an overvoltage protection feature operational
before VCC exceeds its turn-on threshold, at which the
PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is
then limited by the threshold of the low side MOSFET, which
provides some protection to the microprocessor if the upper
MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
ISL6594A, ISL6594B
December 3, 2007
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications with
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Available (RoHS Compliant)
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2004, 2005-2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

ISL6594BCBZ-T Summary of contents

  • Page 1

    ... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | 1-888-INTERSIL or 1-888-468-3774 Intersil (and design registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2004, 2005-2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ...

  • Page 2

    ... ACBZ ISL6594ACR* 94AC ISL6594ACRZ* (Note) 94AZ ISL6594BCB* ISL65 94BCB ISL6594BCBZ* (Note) 6594 BCBZ ISL6594BCR* 94BC ISL6594BCRZ* (Note) 94BZ *Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations ...

  • Page 3

    Typical Application - 4-Channel Converter Using ISL6592 and ISL6594A Gate Drivers +12V +5V +3.3V VDD V12_SEN GND ISL6592 OUT1 VID4 OUT2 VID3 ISEN1 VID2 OUT3 OUT4 VID1 ISEN2 FROM µP VID0 OUT5 VID5 OUT6 LL0 ISEN3 LL1 OUTEN OUT7 OUT8 ...

  • Page 4

    ... Maximum Junction Temperature (Plastic Package +150° 0.3V Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C DC BOOT + 0.3V Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below BOOT 0.3V http://www.intersil.com/pbfree/Pb-FreeReflow.asp DC PVCC + 0.3V PVCC to 15V (V = 12V) DC PVCC Recommended Operating Conditions Ambient Temperature Range 0°C to +85°C Maximum Operating Junction Temperature +125° ...

  • Page 5

    Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued) PARAMETER LGATE Rise Time UGATE Fall Time (Note 4) LGATE Fall Time (Note 4) UGATE Turn-On Propagation Delay (Note 4) LGATE Turn-On Propagation Delay (Note 4) UGATE Turn-Off Propagation Delay (Note ...

  • Page 6

    ... PHASE falls to less than +0.8V, the LGATE is released to turn on. Three-State PWM Input A unique feature of these drivers and other Intersil drivers is the addition of a shutdown window to the PWM input. If the PWM signal enters and remains within the shutdown window for a set hold off time, the driver outputs are disabled and both MOSFET gates are pulled and held low ...

  • Page 7

    In addition, more than 400mV hysteresis also incorporates into the three-state shutdown window to eliminate PWM input oscillations due to the capacitive load seen by the PWM input through the body diode of the controller’s PWM output when the power-up ...

  • Page 8

    MOSFETs. The total gate drive power losses due to the gate charge of MOSFETs and the driver’s internal circuitry and their corresponding average driver current can be estimated with Equations 2 and 3, respectively: • ...

  • Page 9

    ... The pin #1 identifier may be either a mold or mark feature. 7. Dimensions D2 and E2 are for the exposed pads which provide NX b improved electrical and thermal performance Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 0. 0.200 ...

  • Page 10

    ... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...