ISL6594DCRZ Intersil, ISL6594DCRZ Datasheet - Page 5

• Manufacturer Part Number: ISL6594DCRZ
• Description: IC MOSFET DRVR SYNC BUCK 10-DFN
• Manufacturer: Intersil

Specifications of ISL6594DCRZ

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 10.0ns
• Current - Peak: 1.25A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 36V
• Voltage - Supply: 6.8 V ~ 13.2 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
NOTE:
Functional Pin Description
LGATE Turn-On Propagation Delay (Note 4)
UGATE Turn-Off Propagation Delay (Note 4)
LGATE Turn-Off Propagation Delay (Note 4)
LG/UG Three-State Propagation Delay (Note 4)
OUTPUT (Note 4)
Upper Drive Source Current
Upper Drive Source Impedance
Upper Drive Sink Current
Upper Drive Sink Impedance
Lower Drive Source Current
Lower Drive Source Impedance
Lower Drive Sink Current
Lower Drive Sink Impedance
4. Limits should be considered typical and are not production tested.
PACKAGE PIN #
SOIC
1
2
3
4
5
6
7
8
9
-
DFN
3, 8
10
11
1
2
4
5
6
7
9
PARAMETER
SYMBOL
PHASE
UGATE
LGATE
BOOT
PVCC
PWM
GND
VCC
PAD
PIN
N/C
Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See “Internal Bootstrap
Device” on page 7 for guidance in choosing the capacitor value.
No Connection.
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see
“Three-State PWM Input” on page 6 for further details. Connect this pin to the PWM output of the controller.
Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
Its operating range is +6.8V to 13.2V. Place a high quality low ESR ceramic capacitor from this pin to GND.
This pin supplies power to both upper and lower gate drives. Its operating range is +4.5V to 13.2V. Place a high
quality low ESR ceramic capacitor from this pin to GND.
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides
a return path for the upper gate drive.
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
5
Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
R
R
I
I
U_SOURCE
L_SOURCE
SYMBOL
U_SOURCE
L_SOURCE
R
R
I
I
U_SINK
L_SINK
t
t
t
t
U_SINK
L_SINK
PDHL
PDLU
PDTS
PDLL
ISL6594D
V
V
V
V
V
150mA Source Current
V
150mA Sink Current
V
150mA Source Current
V
150mA Sink Current
PVCC
PVCC
PVCC
PVCC
PVCC
PVCC
PVCC
PVCC
= 12V, 3nF Load, Adaptive
= 12V, 3nF Load
= 12V, 3nF Load
= 12V, 3nF Load
= 12V, 3nF Load
= 12V, 3nF Load
= 12V, 3nF Load
= 12V, 3nF Load
TEST CONDITIONS
FUNCTION
MIN
0.85
0.60
1.4
0.9
-
-
-
-
-
-
-
-
TYP
1.25
1.65
0.94
2.0
1.3
10
10
10
10
2
2
3
MAX
1.35
3.0
3.0
2.2
-
-
-
-
-
-
-
-
December 3, 2007
UNITS
FN9282.1
ns
ns
ns
ns
A
Ω
A
Ω
A
Ω
A
Ω