VNB20N07 | |
|---|---|
| Manufacturer Part Number | VNB20N07 |
| Description | MOSFET N-CH 70V 20A D2PAK |
| Manufacturer | STMicroelectronics |
| Series | OMNIFET™ |
| Type | Low Side |
| VNB20N07 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
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- If you still have any questions - please contact us
Specifications of VNB20N07 | |||
|---|---|---|---|
| Input Type | Non-Inverting | Number Of Outputs | 1 |
| On-state Resistance | 50 mOhm | Current - Peak Output | 20A |
| Mounting Type | Surface Mount | Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Transistor Polarity | N Channel | Continuous Drain Current Id | 10A |
| Drain Source Voltage Vds | 80V | On Resistance Rds(on) | 50mohm |
| Rds(on) Test Voltage Vgs | 10V | Threshold Voltage Vgs Typ | 3V |
| Rohs Compliant | No | Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Voltage - Supply | - | Operating Temperature | - |
| Current - Output / Channel | - | Other names | 497-2794-5 |
PrevNext
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ( )
Symbol
Parameter
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
(di/dt)
Turn-on Current Slope
on
Q
Total Input Charge
i
SOURCE DRAIN DIODE
Symbol
Parameter
V
( )
Forward On Voltage
SD
t
(
)
Reverse Recovery
rr
Time
Q
(
)
Reverse Recovery
rr
Charge
I
(
)
Reverse Recovery
RRM
Current
PROTECTION
Symbol
Parameter
I
Drain Current Limit
lim
t
(
)
Step Response
dlim
Current Limit
T
(
)
Overtemperature
jsh
Shutdown
T
(
)
Overtemperature Reset
jrs
I
(
)
Fault Sink Current
gf
E
(
)
Single Pulse
as
Avalanche Energy
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Parameters guaranteed by design/characterization
VNP20N07FI-VNB20N07-VNV20N07
Test Conditions
V
= 15 V
I
= 10 A
DD
d
V
= 10 V
R
= 10
gen
gen
(see figure 3)
V
= 15 V
I
= 10 A
DD
d
V
= 10 V
R
= 1000
gen
gen
(see figure 3)
V
= 15 V
I
= 10 A
DD
D
V
= 10 V
R
= 10
in
gen
V
= 12 V
I
= 10 A
V
= 10 V
DD
D
in
Test Conditions
I
= 10 A
V
= 0
SD
in
I
= 10 A
di/dt = 100 A/ s
SD
o
V
= 30 V
T
= 25
C
DD
j
(see test circuit, figure 5)
Test Conditions
V
= 10 V
V
= 13 V
in
DS
V
= 5 V
V
= 13 V
in
DS
V
= 10 V
in
V
= 5 V
in
V
= 10 V
in
V
= 5 V
in
o
starting T
= 25
C
V
= 20 V
j
DD
V
= 10 V R
= 1 K
L = 10 mH
in
gen
Min.
Typ.
Max.
Unit
90
180
ns
240
400
ns
430
800
ns
150
300
ns
800
1200
ns
1.5
2.2
s
6
10
s
3.5
5.5
s
60
A/ s
60
nC
Min.
Typ.
Max.
Unit
1.6
V
165
ns
0.55
C
6.5
A
Min.
Typ.
Max.
Unit
14
20
28
A
14
20
28
A
29
60
s
70
140
s
o
150
C
o
135
C
50
mA
20
mA
0.95
J
3/13
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