VNQ660SP STMicroelectronics, VNQ660SP Datasheet

IC DRIVER QUAD 36V 6A POWERSO-10

VNQ660SP

Manufacturer Part Number
VNQ660SP
Description
IC DRIVER QUAD 36V 6A POWERSO-10
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ660SP

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
40 mOhm
Current - Peak Output
10A
Voltage - Supply
6 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Switch Type
High Side
Power Switch Family
VNQ660SP
Power Switch On Resistance
40mOhm
Output Current
6A
Mounting
Surface Mount
Supply Current
6mA
Package Type
PowerSO
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
10
Power Dissipation
113600W
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Not Compliant
Other names
497-2700-5

Available stocks

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Manufacturer
Quantity
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Manufacturer:
ST
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Part Number:
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Part Number:
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Quantity:
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Part Number:
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Features
1. Per each channel.
a. See
Table 1.
December 2008
VNQ660SP
CMOS compatible inputs
Off state open load detection
Undervoltage and overvoltage shutdown
Overvoltage clamp
Thermal shutdown
Current limitation
Very low standby power dissipation
Protection against loss of ground and loss of
V
Reverse battery protection
Type
CC
Application schematic on page 16
PowerSO-10
Device summary
Package
50m
R
DS(on)
(1)
I
OUT
(a)
6A
V
36V
Quad channel high side solid state relay
CC
VNQ660SP
Tube
Rev 5
Description
The VNQ660SP is a monolithic device made by
using|
Technology, intended for driving resistive or
inductive loads with one side connected to
ground.
This device has four independent channels. Built-
in thermal shutdown and output current limitation
protect the chip from over temperature and short
circuit.
STMicroelectronics VIPower M0-3
Order codes
10
PowerSO-10
VNQ660SP13TR
Tape and reel
VNQ660SP
1
www.st.com
1/26
26

Related parts for VNQ660SP

VNQ660SP Summary of contents

Page 1

... Quad channel high side solid state relay 36V Description The VNQ660SP is a monolithic device made by using| Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Built- in thermal shutdown and output current limitation ...

Page 2

... PowerSO-10 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.2 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.3 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2/26 Solution 1: a resistor in the ground line (RGND only Solution 2: a diode ( the ground line . . . . . . . . . . . . . . . . . . . . 17 GND = 13.5V VNQ660SP ...

Page 3

... VNQ660SP List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 4. Thermal data (per island Table 5. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CC Table 8. Switching (V = 13V 25° Table 9. Logic inputs Table 10. ...

Page 4

... Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 19 Figure 27. Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10 Figure 29. PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 30. PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 31. PowerSO-10 tube shipment (no suffix Figure 32. SO-28 tape and reel shipment (suffix “TR” 4/ VNQ660SP ...

Page 5

... VNQ660SP 1 Block diagram and pin description Figure 1. Block diagram INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS Figure 2. Configuration diagram (top view) STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1 Table 2. Suggested connections for unused and not connected pins Connection / pin Floating To ground OVERVOLTAGE UNDERVOLTAGE DRIVER 1 DRIVER 2 ...

Page 6

... When mounted on a standard single-sided FR-4 board with 1cm 2. When mounted on a standard single-sided FR-4 board with 6cm 6/26 Parameter < 25° 13.5V 150º bat jstart = 25° 25°C C Parameter 2 2 VNQ660SP Value 41 - 0.3 Internally limited - 15 +/- 10 +/- 10 -200 4000 4000 5000 5000 101 = 14A) L 114 - 40 to 150 - 65 to 150 ...

Page 7

... VNQ660SP 2.3 Electrical characteristics Values specified in this section are for 6V < V otherwise stated. Figure 3. Current and voltage conventions V IN1 V Note CCn OUTn Table 5. Power Symbol Parameter Operating supply ( voltage (1) V Undervoltage shutdown USD Undervoltage (1) V UVhyst hysteresis (1) V Overvoltage shutdown OV (1) ...

Page 8

... Min. Typ. 150 170 135 7 15 < 36V < 36V 2A; OUT 0V 6mH I =1.6mA STAT V =5V STAT V =5V STAT I =1mA 6 6.8 STAT I =-1mA - 0.7 STAT Min. Typ. = 150°C j VNQ660SP 50 µA 0 µA 5 µA 3 µA Max. Unit 200 °C °C 25 ° 0 µ Max. Unit 0.6 V ...

Page 9

... VNQ660SP Table 8. Switching (V Symbol t Turn-on delay time d(on) t Turn-off delay time d(off) dV /dt Turn-on voltage slope OUT (on) dV /dt Turn-off voltage slope OUT (off) Table 9. Logic inputs Symbol V Input low level voltage IL I Input low level current IL V Input high level voltage ...

Page 10

... Switching characteristics V OUT dV I SENSE INPUT Table 11. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage Overvoltage Output voltage > V Output current < I 10/26 80% /dt OUT (on) 10 90% t DSENSE t d(on) Input 90% dV /dt OUT (off d(off) t Output Status < > VNQ660SP TSD ) L TSD ...

Page 11

... VNQ660SP Table 12. Electrical transient requirements ISO T/R 7637/1 Test pulse ISO T/R 7637/1 Test pulse Class All functions of the device are performed as designed after exposure to C disturbance. One or more functions of the device is not performed as designed after exposure E and cannot be returned to proper operation without replacing the device. ...

Page 12

... LOAD VOLTAGE STATUS V CC INPUT n LOAD VOLTAGE STATUS INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS INPUT n LOAD CURRENT STATUS n 12/26 NORMAL OPERATION n UNDERVOLTAGE V USDhyst V USD n undefined OVERVOLTAGE V <V V > OPENLOAD with external pull- DOL OVERTEMPERATURE T TSD VNQ660SP OV t DOL V OL ...

Page 13

... VNQ660SP 2.4 Electrical characteristics curves Figure 7. Off state output current IL(off1) (µ Off state 8 Vcc= 24V Vout -50 - (ºC ) Figure 9. Input clamp voltage Vicl (V) 8 7.75 I in= 1mA 7.5 7.25 7 6.75 6.5 6.25 6 -50 - (ºC ) Figure 11. Overvoltage shutdown Vov ( -50 - (ºC ) Figure 8. 100 ...

Page 14

... I out= 1A Tc= 150º Tc= 25ºC 40 Tc= - 40º Vcc (V) Vihyst (V) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 - 100 125 150 Tc (ºC ) Vil (V) 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 - 100 125 150 Tc (ºC ) VNQ660SP 175 175 ...

Page 15

... VNQ660SP Figure 19. Status leakage current Ilstat (µA) 0.05 0.045 Vstat= 5V 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 -50 - (ºC ) Figure 21. Status clamp voltage Vscl (V) 7.4 7.3 I stat= 1mA 7.2 7.1 7 6.9 6.8 6.7 6.6 -50 - (ºC ) Figure 20. Status low output voltage ...

Page 16

... Power dissipation 16/26 +5V R prot STATUS R INPUT1 prot R INPUT2 prot R prot INPUT3 R prot INPUT4 V GND GND ) S(on)max ) / ( - GND (when V < 0 during reverse battery situations) is: GND GND V CC OUTPUT1 OUTPUT2 OUTPUT3 OUTPUT4 GND R GND D GND only) GND resistor: VNQ660SP D ld ...

Page 17

... VNQ660SP This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I maximum on-state currents of the different devices. Please note that, if the microprocessor ground is not shared by the device ground, then the R will produce a shift (I GND values ...

Page 18

... Values are generated with R In case of repetitive pulses, T must not exceed the temperature specified above for curves B and C. 18/26 0 (mH) = 150ºC Jstart = 100ºC Jstart = 125ºC Jstart Demagnetization Demagnetization = 0 L (at beginning of each demagnetization) of every pulse jstart VNQ660SP = 13.5V 100 Demagnetization t ...

Page 19

... VNQ660SP 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 25. PowerSO-10 PC board Note: Layout condition of R thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad lay-out Figure 26. R thj-amb RTHjamb (ºC / and Z measurements (PCB FR4 area = 58mm x 58mm, PCB th th ...

Page 20

... Package and PCB thermal data Figure 27. Thermal impedance junction ambient single pulse ZT H (° 1000 100 10 1 0.1 0.0001 0.001 Equation 1 pulse calculation formula : where p Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10 20/26 0.01 0.1 T ime ( – + THtp 100 1000 VNQ660SP 2 0 ...

Page 21

... VNQ660SP Table 13. Thermal parameters Area / island ( R11 (°C/ R10 = R12 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/ C11 (W.s/° C10 = C12 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/° 0.5 0.15 0.5 0 0.0006 0.0021 0.02 0.5 1.5 5 Package and PCB thermal data ...

Page 22

... JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at www.st.com. 5.2 PowerSO-10 mechanical data Figure 29. PowerSO-10 package dimensions 22/ DETAIL "A" 0. DETAIL "A" VNQ660SP B 0. EATING P LANE EATING PLANE A1 L ...

Page 23

... VNQ660SP Table 14. PowerSO-10 mechanical data Dim (1) L (1) 1. Muar only POA P013P. Package and packing information mm Min. Typ. 3.35 3.4 0 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0° 2° ...

Page 24

... (± 0. (± 0.1/-0) 1.5 D1 (min) 1.5 F (± 0.05) 11.5 K (max) 6.5 P1 (± 0.1) 2 End Top cover tape VNQ660SP (no suffix) CASABLANCA MUAR Tube length (± Base Q.ty Bulk Q.ty A 0.5) 50 1000 532 10.4 16.4 50 1000 532 4.9 17.2 Reel dimensions Base Q.ty 600 Bulk Q ...

Page 25

... VNQ660SP 6 Revision history Table 15. Document revision history Date 22-Jun-2004 14-Jul-2004 24-Jul-2004 28-Jul-2004 03-Dec-2008 Revision 1 Initial release. 2 New revision. Minor changes. Current and voltage convention update (page 2). Configuration diagram (top view) & suggested connections for unused and not connected pins insertion (page 3). ...

Page 26

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 26/26 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com VNQ660SP ...

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