BTS3160D Infineon Technologies, BTS3160D Datasheet
BTS3160D
Specifications of BTS3160D
BTS3160DTR
SP000106963
SP000305175
Available stocks
Related parts for BTS3160D
BTS3160D Summary of contents
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... Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 Pin Assignment BTS3160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Supply and Input Stage ...
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... Smart Low Side Power Switch HITFET - BTS3160D 1 Overview The BTS3160D is a one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is realized by a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. Features • ...
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... Replaces electromechanical relays, fuses and discrete circuits Description The BTS3160D is a latching one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology. ...
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... Block Diagram Under V voltage S lockout Gate IN / Driving Fault Unit ESD Protection Figure 1 Block Diagram for the BTS3160D Datasheet Smart Low Side Power Switch Over- Over- voltage temperature Protection Protection Error Logic Short circuit Protection 5 HITFET - BTS3160D Block Diagram Drain ϑ GND B loc k Diagram ...
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... Voltage and current naming definition Following figure shows all the terms used in this datasheet, with associated convention for positive values GND Figure 2 Terms Datasheet Fault GND I GND 6 Smart Low Side Power Switch HITFET - BTS3160D Block Diagram Drain V D Terms .emf Rev. 1.1, 2008-02-28 ...
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... Ground; Signal ground, Pin 4 and 5 must be externally shorted 1) Not shorting pin 4 and 5 will considerably increase the on-state resistance and reduce the peak current capability. Datasheet BTS3160D GND 5 GND Fault Smart Low Side Power Switch HITFET - BTS3160D Pin Configuration P inConfiguration.emf 1) Rev. 1.1, 2008-02-28 ...
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... Smart Low Side Power Switch General Product Characteristics Symbol Limit Values Min. Max -0.3 45 S(pulse) -0 D(SC) -0 -40 150 j T -55 150 stg ESD 8 HITFET - BTS3160D Unit Conditions V – – V – 150°C J(Start 25°C J °C – °C – HBM Rev. 1.1, 2008-02-28 ...
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... Min. Typ. Max 13 – 1.5 – S(OFF) – – 4 – – – 1 Symbol Limit Values Min. Typ. Max. R – 0.9 1.1 thJC R – 80 thJA – HITFET - BTS3160D General Product Characteristics Unit Conditions V – µ 0 13 ° 0 13 ° 0 13 150 ° 5 ...
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... Device × × 1.5 mm epoxy PCB FR4 with 6 cm drain connection. PCB mounted vertical without blown air. Datasheet Single pulse - ° Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics Zth.emf 2 (one layer, 70 µm thick) copper area for Rev. 1.1, 2008-02-28 ...
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... Datasheet Figure V S Regulator Z D GND V S(min SUVOFF SUVON 11 Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5. Due to an internal voltage regulator the S upply.emf is monitored by the S . There is no failure feedback for LO_Hys teresis .emf Rev. 1.1, 2008-02-28 < SUVON ...
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... BTS3160D. It’s ensured that the device switches off in case of open input pin. A zener structure protects the input circuit against ESD pulses. As the BTS3160D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Information” ...
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... SUVON 4.0 – – V SUVOFF V – 0.2 – SUVHY V – – 0.8 INL V 2.0 – – INH 20 50 100 IN-Fault 600 I Fault_ONth 13 HITFET - BTS3160D Supply and Input Stage Unit Conditions 5 4 SUVON SUVOFF fault condition fault condition µ fault condition 5.3 V; ...
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... Vs. 16,00 14,00 12,00 10,00 8,00 6,00 4,00 -40 -15 Figure 9 Typical On-State Resistance Datasheet Smart Low Side Power Switch V =10V S typ 110 135 T [ ° HITFET - BTS3160D Power Stage . Figure 9 shows J ,while Figure 10 shows the DS(on) 150 rds on_Tj.emf Rev. 1.1, 2008-02-28 ...
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... Figure 10 Typical On-State Resistance & Figure 11 Typical Output Characteristics, Datasheet typ [ DSon S = 10V S = 30V typ °C, Parameter Jstart 15 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 30 rdson_V s.emf 1 Rev. 1.1, 2008-02-28 Outputchar.emf ...
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... Figure 12 Typical Zero Input Voltage Drain Current, Datasheet typ 100 125 150 175 T [°C] Tj [° DSS J 16 Smart Low Side Power Switch HITFET - BTS3160D Power Stage Zeroindrain.emf Rev. 1.1, 2008-02-28 ...
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... Figure 13 Switching a resistive Load In order to minimize the emission during switching the BTS3160D limits the slopes during turn on- and off to slow slew rate settings. The definition is shown in should be connected to battery voltage. For supply voltages other than nominal battery the edge shaping can differ from the values in the electrical characteristics table below ...
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... See Figure 15 for more details. Figure 15 Output Clamp IN High Low I D Von V DAZ V bb Figure 16 Switching an inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3160D. This energy can be calculated with following equation – bb DS(CL ⋅ ---------------------------------- - ln ⋅ DS(CL) R ...
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... Figure 17 shows the inductance / current combination the BTS3160D can handle. For maximum single avalanche energy please also refer to E 10,0 1,0 0,1 0,0 10 Figure 17 Maximum load inductance for single pulse 150 °C L j,start Datasheet Smart Low Side Power Switch value in “Energies” on Page 8 ...
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... DSS – 110 t ond t 80 150 250 110 t offd t 80 150 250 off - 0.1 0.3 0 0.1 0.3 0.7 D off |dI/dt| – 0.04 0.07 slow 20 HITFET - BTS3160D Power Stage Unit Conditions mΩ high ° mΩ high 150 ° 0 °C SMD 5 ≥ < ...
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... Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max. |dI/dt| – – 0.3 fast – dfault -0.3 -1.0 -1 (one layer, 70 µm thick) copper area for drain connection. 21 HITFET - BTS3160D Power Stage Unit Conditions 1) = 2.2 Ω A/µ 13 ohmic load 1) µ - ...
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... Fault conditions are considered as “outside” normal operation. 7.1 Thermal Protection The device is protected against over temperature resulting due to overload and / or bad cooling conditions. The BTS3160D has a thermal latch function. The thermal latch is reset by IN-Low signal. See latch behavior. The diagram naming refers to Figure 8 ...
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... The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Datasheet Short circuit t dfau lt Short Circuit shut off fau lt d fau lt 23 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions Short Circuit shut off short spike dfau lt S hort circuit Ty pe 2.emf short spike hort c irc uit Ty pe 1.emf Figure Rev ...
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... Figure 21 Test Setup for Short Circuit Characterization Test Datasheet Figure Vcc Control circuit R IN BTS3160 GND 24 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 21. The BTS3160D is a low side switch Drain GND S etup_S hort_c irc uit.emf Rev. 1.1, 2008-02- ...
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... Not subject to production test, specified by design. Datasheet Symbol Limit Values Min. Typ. T 150 175 JSD ∆ T – 10 JSD DAZ – 45 ≤ 100 DSC dSC 25 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions Unit Conditions Max. 1) °C – 6 – 6 – ...
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... IFault_ONth to avoid immediate restart RIN IN S IN/Fault 20µ 100µA GND must be higher than V to switch ON. INH,min 26 Smart Low Side Power Switch HITFET - BTS3160D Application Information BTS3160D Fault information 1.0mA : 3.0mA Fault_RIN.emf while the device fault current is IN Rev. 1.1, 2008-02-28 ...
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... HIGH,min The BTS3160D is resetting the fault latch, if the current on IN pin goes below I This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. ...
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... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 6.5 -0. 5.7 MAX. ( 0.6 ±0.1 1.14 0. Smart Low Side Power Switch HITFET - BTS3160D Package Outlines B +0.05 2.3 -0.10 +0.08 0.5 -0.04 +0.20 0.9 -0.01 0...0.15 +0.08 0.5 -0.04 0 PG-TO252-5-13-PO V0 ...
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... RoHS logo to overview page and added green feature to list Rev. 1.0 2007-08-14 first released datasheet revision Datasheet Smart Low Side Power Switch 29 HITFET - BTS3160D Revision History Rev. 1.1, 2008-02-28 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...