L6226PDTR STMicroelectronics, L6226PDTR Datasheet - Page 11

• Manufacturer Part Number: L6226PDTR
• Description: IC DRVR DUAL FULL BRDG 36PWRSOIC
• Manufacturer: STMicroelectronics
• Type: H Bridger

Specifications of L6226PDTR

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 730 mOhm
• Current - Output / Channel: 1.4A
• Current - Peak Output: 2.8A
• Voltage - Supply: 8 V ~ 52 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 36-PowerSOIC
• Operating Supply Voltage: 8 V to 52 V
• Supply Current: 10 mA
• Mounting Style: SMD/SMT
• For Use With: 497-6816 - EVAL BOARD FOR L6226Q
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5347-2; L6226PDTR

L6226
4
4.1
4.2
Circuit description
Power stages and charge pump
The L6226 integrates two independent Power MOS full bridges. Each Power MOS has an
R
conduction protection is achieved using a dead time (td = 1μs typical) between the switch off
and switch on of two Power MOS in one leg of a bridge. Using N channel power MOS for the
upper transistors in the bridge requires a gate drive voltage above the power supply voltage.
The Bootstrapped (VBOOT) supply is obtained through an internal oscillator and few
external components to realize a charge pump circuit as shown in
output (VCP) is a square wave at 600 kHz (typical) with 10 V amplitude. Recommended
values/part numbers for the charge pump circuit are shown in Table 6.
Table 6.
Figure 5.
Logic inputs
Pins IN1
logic inputs. The internal structure is shown in
thresholds are respectively Vthon=1.8V and Vthoff = 1.3V. Pins EN
used to implement Overcurrent and Thermal protection by connecting them respectively to
the outputs OCD
chosen, some care needs to be taken in driving these pins. Two configurations are shown in
Figure 7
and a capacitor C
Pull structure the resistor R
The resistor R
values for R
the values is found in the overcurrent protection section.
DSon
= 0.73 Ω (typical value @ 25 °C), with intrinsic fast freewheeling diode. Cross
A
and
, IN2
EN
Charge pump external components values
Charge pump circuit
Figure
EN
A
and C
, IN1
A
should be chosen in the range from 2.2 kΩ to 180 kΩ. Recommended
EN
and OCD
C
8. If driven by an open drain (collector) structure, a pull-up resistor R
B
are connected as shown in
EN
BOOT
D1
D2
, IN2
C
P
are respectively 100 kΩ and 5.6 nF. More information on selecting
B
EN
, EN
B
, which are open-drain outputs. If that type of connection is
and the capacitor C
Doc ID 9452 Rev 4
A
and EN
B
are TTL/ CMOS and microcontroller compatible
Figure
Figure
EN
4. Typical value for turn-on and turn-off
are connected as shown in
7. If the driver is a standard Push-
1N4148
1N4148
220 nF
A
10 nF
Figure
and EN
Circuit description
5. The oscillator
B
are commonly
Figure
11/31
8.
EN