VNN7NV0413TR STMicroelectronics, VNN7NV0413TR Datasheet - Page 9

MOSFET N-CH 40V 6A SOT223

VNN7NV0413TR

Manufacturer Part Number
VNN7NV0413TR
Description
MOSFET N-CH 40V 6A SOT223
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VNN7NV0413TR

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
60 mOhm
Current - Peak Output
9A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Switch Type
Low Side
Power Switch Family
VNN7NV04
Power Switch On Resistance
60mOhm
Output Current
6A
Mounting
Surface Mount
Supply Current
100uA
Package Type
SOT-223
Pin Count
3 +Tab
Power Dissipation
7W
On Resistance (max)
60 mOhms
Maximum Power Dissipation
7 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Not Compliant
Other names
497-2519-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNN7NV0413TR
Manufacturer:
ST
Quantity:
20 000
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Switching (T
Source drain diode (T
Protections (-40 °C < T
Symbol
(dI/dt)
V
t
t
t
t
I
t
d(on)
d(off)
d(on)
d(off)
RRM
T
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
f
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Drain current limit
Step response current
limit
Over temperature
shutdown
Over temperature reset
Fault sink current
Single pulse avalanche
energy
j
Electrical characteristics (continued)
=25 °C, unless otherwise specified)
Parameter
j
=25 °C, unless otherwise specified)
j
< 150 °C, unless otherwise specified)
V
V
(see figure
V
V
(see figure
V
V
V
I
I
I
V
(see test circuit, figure
V
V
V
starting T
V
(see figures
gen
SD
SD
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=3.5 A; V
=3.5 A; dI/dt=20 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see figure
=15 V; I
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
=5 V; R
Doc ID 7383 Rev 3
j
=25 °C; V
gen
DS
DS
DS
Figure
Figure
D
D
D
D
gen
gen
gen
Figure 6.
IN
Test conditions
=3.5 A
=3.5 A
=3.5 A
=3.5 A; V
=13 V
=13 V
=13 V; T
=R
=0 V
=R
=2.2 KΩ
=R
IN MIN
IN MIN
IN MIN
4.)
4.)
DD
j
=150 Ω; L=24 mH
&
=T
=24 V
IN
Figure
=150 Ω
=150 Ω
Figure
=5 V
jsh
Figure
5.)
8.)
7.)
Min
150
135
200
6
Electrical specifications
0.75
0.28
Typ
100
470
500
350
220
175
4.6
5.4
3.6
6.5
0.8
2.5
4.0
18
15
9
1500
1500
1000
Max
14.0
16.0
11.0
300
200
2.3
12
A/µs
Unit
mA
mJ
nC
µC
ns
ns
ns
µs
µs
µs
µs
ns
µs
°C
°C
ns
V
A
A
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