BTS3408G Infineon Technologies, BTS3408G Datasheet - Page 8

• Manufacturer Part Number: BTS3408G
• Description: IC SWITCH LOW SIDE DUAL PDSO-8
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3408G

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 480 mOhm
• Current - Output / Channel: 550mA
• Current - Peak Output: 1.5A
• Voltage - Supply: 4.5 V ~ 60 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Switch Type: Low Side
• Power Switch Family: BTS3408G
• Input Voltage: -0.3 to 7V
• Power Switch On Resistance: 550mOhm
• Output Current: 550mA
• Mounting: Surface Mount
• Supply Current: 1.5mA
• Package Type: DSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 8
• Power Dissipation: 880mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS3408G; BTS3408GNT; BTS3408GT; BTS3408GTR; BTS3408GXT; SP000014072; SP000305177

Electrical Characteristics (cont’d)
V
Parameter
Input ’High’ voltage
Input voltage hysteresis
Input pull down current
Digital Output (FAULT)
Output ’Low’ voltage
Diagnostic Functions
Open load / short to ground
detection voltage
Fault filter time for open load
Protection Functions
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse inductive
energy
1)
2)
3)
Datasheet Rev. 1.3
one channel active,T
both channel active,T
one channel active,T
both channel active,T
IN1, IN2:
ENA:
IN1, IN2:
ENA:
S
See also diagram 4 on page 14.
See also diagram 5 on page 14.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
= 4.5 to 18V;
T
j
= -40 to 150°C; unless otherwise specified
j(start)
j(start)
j(start)
j(start)
3)
=25°C
=150°C
=25°C
=150°C
Sym-
bol
V
V
V
I
I
V
V
t
T
∆
E
filter(OL)
INPD
ENAPD
jt
T
INH
ENAH
INhys
FLTL
DS(OL)
AS
jt
min. typ. max.
2.0
2.0
–
20
20
–
0.5*V
30
150
–
8
Limit Values
S
–
–
300
50
50
–
0.7*V
100
165
10
S
–
–
–
100
100
0.4
0.9*V
200
180
–
800
550
240
240
S
Unit Test Conditions
V
mV –
µA
V
V
µs
°C
Κ
mJ
HITFET
–
–
I
–
V
–
–
I
FLTL
D
S
=0.7 A
=5V
=1.6mA,

BTS3408G
2008-01-09