BTS728L2 Infineon Technologies, BTS728L2 Datasheet - Page 9

• Manufacturer Part Number: BTS728L2
• Description: IC HISIDE PWR SWITCH 2CH PDSO-20
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS728L2

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 50 mOhm
• Current - Output / Channel: 4A
• Current - Peak Output: 22A
• Voltage - Supply: 4.75 V ~ 41 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-20
• Switch Type: High Side
• Power Switch Family: BTS 728
• Input Voltage: -10 to 16V
• Power Switch On Resistance: 30mOhm
• Output Current: 5.5A
• Mounting: Surface Mount
• Supply Current: 3mA
• Package Type: DSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 20
• Power Dissipation: 3700W
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BTS728L2NT; BTS728L2T; SP000011307

GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
For inductive load currents up to the limits defined by Z
(max. ratings and diagram on page 9) each switch is
protected against loss of V bb .
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Semiconductor Group
bb
V
V
disconnect with energized inductive
bb
bb
GND
high
> 0, no V
V
IN
V
ST
GND
IN
ST
IN
ST
ST
> V
= low signal available.
PROFET
PROFET
GND
GND
IN
V
V
bb
bb
- V
V
GND
IN(T+)
OUT
OUT
device stays off
L
9
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C, V bb = 12 V, R L = 0
Z L [mH]
=
1000
100
E
10
AS
1
2
E
=
E
bb
2
AS
I
L
·
3
R
·
= E
L
L
(
4
V
bb
bb
IN
ST
+ E
5
+ |V
E
L
L
6
PROFET
- E
OUT(CL)
=
(one channel)
GND
1 /
V
R
bb
2
7
= V
·
L
|)
·
8
ON(CL)
I
2
L
ln
OUT
9
(1+
E AS
0 :
BTS 728 L2
4)
·
10 11 12
Z
2003-Oct-01
|V
i
L
L
(t) dt,
{
OUT(CL)
I
R
L
I L [A]
L
·
L
R
L
|
E
E
E Load
)
R
L