IPS021L International Rectifier, IPS021L Datasheet

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IPS021L

Manufacturer Part Number
IPS021L
Description
IC MOSFET LS DRIVER 5A SOT-223
Manufacturer
International Rectifier
Type
Low Sider
Datasheet

Specifications of IPS021L

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
130 mOhm
Current - Output / Channel
1.4A
Current - Peak Output
10A
Voltage - Supply
4 V ~ 6 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IPS021L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPS021L
Manufacturer:
IR
Quantity:
2 427
Part Number:
IPS021L
Manufacturer:
IR
Quantity:
20 000
Features
Typical Connection
www.irf.com
Description
The IPS021L is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET ®
POWER MOSFET and a gate driver. It offers full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
or when the drain current reaches 5A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
(Refer to lead assignment for correct pin configuration)
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Q
FULLY PROTECTED POWER MOSFET SWITCH
Logic signal
(if needed)
R in series
IN
o
C
control
Product Summary
Package
S
R
V
I
T
Load
shutdown
on
ds(on)
clamp
/ T
off
D
S
Data Sheet No.PD60145-K
3 Lead SOT223
150m
1.5 s
IPS021L
50V
5A
(max)
1

Related parts for IPS021L

IPS021L Summary of contents

Page 1

... Active clamp Low current & logic level input E.S.D protection Description The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, over- temperature, ESD protection and drain to source active clamp.This device combines a HEXFET ® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh envi- ronments ...

Page 2

... IPS021L Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref- erenced to SOURCE lead. (T Ambient = 25 copper thickness.. Symbol Parameter V ds Maximum drain to source voltage V in Maximum Input voltage I in, max ...

Page 3

... Min. Typ. Max. Units Test Conditions 165 — — 4 5.5 7 1.5 2 400 — — IPS021L 5V 14V 40V 20mA (see Fig.3 & shutdown (see Fig.3 & 50mA 14V over-current triggered See figure 2 s See figure 2 nC ...

Page 4

... IPS021L Functional Block Diagram All values are typical IN 8 Lead Assignments 4 1000 ( DRAIN 47 V 200 k I sense T > 165°c I > Isd SOURCE www.irf.com ...

Page 5

... Vcc ) Vds ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com 90 % Vin 10 % Tr-in Tr-in t > T reset t < T reset 90 % Ids Vds Figure rise time & switching time definitions T clamp IPS021L Td off load Rem : V load is negative + during demagnetization Vin IN Vds Ids ...

Page 6

... IPS021L All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 300 250 200 150 100 Figure 5 - Rds Input Voltage (V) 10 ton de lay 9 ris e tim e 8 130% rds Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs Input Voltage (V) ...

Page 7

... Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us Resistor ( ) Isd 25°C Ilim 25° Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) www.irf.com 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us -50 -25 Figure shutdown (A) Vs Temperature ( IPS021L delay off fall tim Resistor ( ) 100 125 150 ...

Page 8

... IPS021L 5 1" footprint 55°C/W std. footprint 100°C - 100 Figure 13 - Max.Cont. Ids ( Amb. Temperature ( C) s ingle puls e 10 100 Hz rth=100°C/W dT=25° rth=100°C/W dT=25°C 1 Vbat = 14 V Tjini = T sd all curves for 1 mosfet active 0 Figure clamp (A) Vs Inductive Load (mH) ...

Page 9

... Vds clamp @ Isd 85% Vin clamp @ 10mA 80% -50 - 100 125 150 Figure 19 -Vin clamp and Vds clamp www.irf.com 100 125 150 -50 -25 Figure 18 - Rise Time, Fall Time and Treset ( s) C) IPS021L Treset rise tim e fall tim 100 125 150 ...

Page 10

... IPS021L Case Outline 10 3-Lead SOT-223 01-6029 01-0022 05 (TO-261AA) www.irf.com ...

Page 11

... Tape & Reel - SOT223 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. IPS021L 01-0028 05 / 01-0008 02 6/11/2001 11 ...

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