BTS660P Infineon Technologies, BTS660P Datasheet

SWITCH HGH SIDE CURRNT TO220-7-3

BTS660P

Manufacturer Part Number
BTS660P
Description
SWITCH HGH SIDE CURRNT TO220-7-3
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS660P

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
7.2 mOhm
Current - Output / Channel
44A
Current - Peak Output
90A
Voltage - Supply
5 V ~ 58 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Through Hole
Package / Case
TO-220-7 (Bent and Staggered Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BTS660PIN
BTS660PNK
SP000012535

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Quantity
Price
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Smart Highside High Current Power Switch
Reversave
Features
Application
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
1
2
Infineon Technologies AG
)
)
Reverse battery protection by self turn on of
power MOSFET
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of V
Electrostatic discharge (ESD) protection
Power switch with current sense diagnostic
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
feedback for up to 48 V DC grounded loads
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
bb
protection
I
IN
3
Logic GND
V
IN
IN
V
2
IS
)
ESD
5
IS
Voltage
Voltage
sensor
source
Logic
I
R
IS
IS
1
)
Overvoltage
protection
Charge pump
Level shifter
Rectifier
chip on chip technology. Providing embedded protective functions.
Page 1
Current
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation I
Current sense ratio
limit
Temperature
unclamped
ind. loads
detection
Voltage
Limit for
Output
sensor
protection
Gate
PROFET ® Data Sheet BTS660P
Standard
R
bb
Current
Sense
TO 220-7SMD
1
PROFET
+ V bb
7
OUT
V
V
V
R
I
I
L(ISO)
L(SC)
L :
bb(AZ)
ON(CL)
bb(on)
ON
1,2,6,7
4 & Tab
I
I
IS
SMD
L
Load GND
1
Load
5.0 ... 58
13 000
2003-Oct-01
7
70
44
90
62
9 m
V
V
V
A
A

Related parts for BTS660P

BTS660P Summary of contents

Page 1

... Current Overvoltage Gate source protection limit protection Limit for Charge pump unclamped ind. loads Level shifter Rectifier Output Voltage Logic detection Temperature sensor Page 1 PROFET ® Data Sheet BTS660P V bb(AZ) V ON(CL) V 5.0 ... 58 bb(on L(ISO) L(SC 220-7SMD SMD Standard 4 & Tab + V bb ...

Page 2

... Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! T =-40 ...+150°C: j,start = 13 °C = 150°C const., C Page 2 Data Sheet BTS660P connection Symbol Values self-limited ...

Page 3

... L j =6V, I =20A, T =150° ° 1 150 ° 90 OUT 10 OUT ) dV/dt OUT ) -dV/dt OUT 2 Page 3 Data Sheet BTS660P Symbol Values min typ ) thJC 60 -- thJA -- 33 Symbol Values min typ -- 7 ON(Static L(ISO) 9.9 11.1 L(NOM) -- 185 L(Max) -- 105 50 -- ...

Page 4

... T =-40° 25...+150° =-40...+25° 150°C: j -decrease, the operating voltage range is extended down increases from less than V bIN OUT bb Page 4 Data Sheet BTS660P Symbol Values min typ -- 7.2 ON(inv) 14 L(inv) -- 0.6 ON 5.0 -- bb(on) 1.5 3.0 bIN(u) 3.0 4.5 bIN(ucp) ...

Page 5

... T =25° L(SC) T =+150° L(SC) 17) t d(SC) V ON(CL ON(SC ° ON(rev 150 ° =150°C: j resistor an input resistor is recommended as described bb Page 5 Data Sheet BTS660P Values min typ max -- 150 -- -- 8.8 10 120 105 125 = the power IN IS Unit 180 350 s 72 ...

Page 6

... IS(LL IS(LH) T =-40° 25...+150° s(IS) I IN(on) I IN(off) Page 6 Data Sheet BTS660P Values min typ 11 400 13 000 15 400 ILIS 11 400 13 000 14 600 11 000 13 000 14 200 11 000 13 000 16 000 11 000 13 000 15 000 11 000 13 000 14 500 10 500 13 000 17 000 10 500 13 000 15 500 ...

Page 7

... OUT 1,2,6 OUT Typical R than straight leads due to l and can thus be detected via the sense current I L Page 7 Data Sheet BTS660P Remark = ilis IS IS,lim ON(Fold back) no longer proportional > ON(Fold back) >V , shutdown will occure ON(SC) measurement layout l 5.5mm V force bb Out Force ...

Page 8

... IN . Use a bb should be less than Note: For large values of R almost you don't use the current sense output in your application, you can leave it open. d(SC) Inductive and over voltage output clamp + OUT V is clamped Page 8 Data Sheet BTS660P Z, nominal ( / ilis ...

Page 9

... IN Version c: Sometimes a necessary voltage clamp is above bb given by non inductive loads R same switch and eliminates the need of clamping circuit 12V used and Page 9 Data Sheet BTS660P =0). For higher clamp voltages OUT IN PROFET OUT IN PROFET IS Zb connected to the OUT IN PROFET IS < ...

Page 10

... device is shut down after · i (t) dt, ON(CL Signal · ( OUT(CL) Page 10 Data Sheet BTS660P 100 100 *R . After a delay time defined will be reset. The device is turned on again, L(SC) with latch function. d(SC PROFET OUT Signal GND 1000 ...

Page 11

... Can be "switched off" by using a diode D 25 Infineon Technologies AG BTS 660P < V after shutdown. In most cases V ON(SC) (see page 8) or leaving open the current sense output. S Page 11 Data Sheet BTS660P = 0 V after shutdown (V OUT < V (see page 5). No latch bb ON(SC) 2003-Oct-01 OUT ...

Page 12

... ILIS L 20000 18000 16000 14000 12000 10000 8000 [A] k ilis L Current sense ratio f(I ILIS L k ilis 20000 18000 16000 14000 12000 60 80 10000 I [A] L Page 12 Data Sheet BTS660P ), T = 25°C j max typ min 150°C j max typ min 2003-Oct- [ [A] L ...

Page 13

... Typ. on-state resistance [mOhm 150° 85°C 10 25°C 8 -40° Infineon Technologies AG Typ. input current bIN I [mA] IN 1.6 1.4 1.2 only for t < t d(SC) 1.0 0.8 0.6 0.4 25° static dynamic [V] bb Page 13 Data Sheet BTS660P ), bIN = 2003-Oct- [V] bIN ...

Page 14

... Figure 2c: Switching an inductive load dV/dtoff V OUT t off I t slc(IS soff(IS) Figure 3d: Short circuit: shut down by short circuit detection, reset Shut down remains latched until next reset via input. Page 14 Data Sheet BTS660P IN I L(SCp) t d(SC) V >>0 OUT V =0 OUT 2003-Oct- ...

Page 15

... Figure 4e: Overtemperature Reset if T < Auto Restart V OUT T j Figure 6f: Undervoltage restart of charge pump, overvoltage clamp V OUT V IN dynamic, short 6 Undervoltage not below V bIN( bIN(u) bIN(ucp) Infineon Technologies ON(CL ON(CL) Page 15 Data Sheet BTS660P 2003-Oct-01 ...

Page 16

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 16.15 Page 16 Data Sheet BTS660P 2003-Oct-01 ...

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