NCP1601APG ON Semiconductor, NCP1601APG Datasheet - Page 11

IC PFC CTRLR CRM/TRANSITION 8DIP

NCP1601APG

Manufacturer Part Number
NCP1601APG
Description
IC PFC CTRLR CRM/TRANSITION 8DIP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1601APG

Mode
Critical Conduction (CRM), Discontinuous (Transition)
Frequency - Switching
58kHz
Current - Startup
17µA
Voltage - Supply
12.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Switching Frequency
405 KHz
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NCP1601APGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCP1601APG
Manufacturer:
ON Semiconductor
Quantity:
1 200
Part Number:
NCP1601APG
Manufacturer:
ON/安森美
Quantity:
20 000
be too bulky because it can pollute the power factor by
distorting the rectified sinusoidal input voltage.
PFC Methodology
particularly designed for both DCM and CRM operation.
The PFC methodology is described in this section.
switching cycle starts from zero in DCM. CRM is a special
case of DCM when t
MOSFET is on, the inductor current I
to I
voltage V
filter absorb the high- - frequency component of inductor
current. It makes the input current I
signal.
formulated.
NCP1601 uses a proprietary PFC methodology
As shown in Figure 27, the inductor current I
The input filter capacitor C
From (eq.1) and (eq.2), the input impedance Z
Inductor Current
pk
for a time duration t
Figure 26. DCM/CRM PFC Boost Converter
V
in
t
1
Figure 27. Inductor Current in DCM
in
. (eq.1) is formulated.
I
in
Z in =
Z in =
I in =
I in =
C
3
filter
I
L
t
V in
V in
I pk
I in
I in
2
= 0. When the PFC boost converter
T
I pk ( t 1 + t 2 )
2
V in = L
=
=
2 T
1
t 1 ( t 1 + t 2 )
2L
t 1
with inductance L and input
filter
L
I pk
2TL
t 1
and the front- - ended EMI
t
3
I
pk
L
in
increases from zero
for DCM
for CRM
for DCM
for CRM
a low- - frequency
L
of each
(eq.2a)
(eq.2b)
(eq.3a)
(eq.3b)
http://onsemi.com
C
(eq.1)
bulk
V
in
time
out
is
11
in (eq.3) are constant or slowly varying.
generated by a feedback signal V
modulation circuit and timing diagram are shown in
Figure 28. A relationship in (eq.4) is obtained.
the ramp capacitor C
Hence, according to (eq.4) the MOSFET on time t
proportional to V
maximum voltage of V
V
9 V ESD Zener diode. The 3.9 V maximum limit of this
V
control voltage V
inductor current. The circuit in Figure 29 makes (eq.5)
where the value of resistor R
of resistor R
C
ton(max)
ton
Power factor is corrected when the input impedance Z
The MOSFET on time t
The charging current I
In order to protect the PFC modulation comparator, the
control
The V
Ramp
C
ramp
Figure 28. PFC Modulation Circuit and Timing
indirectly limits the maximum on time.
V
control
control
Figure 29. V
(3.9 V typical) and the ramp pin (Pin 3) is with a
3
2
output
ramp
(R
V
2
V ton =
ton
processing circuit generates V
1
ton
>> R
closed when
output low
control
.
t 1 =
ramp
control
T V control
2
R
).
Diagram
ch
is constant for a particular design.
ton
t 1 + t 2
1
C ramp V ton
and time information of zero
I
ch
is constant 100 mA current and
1
1
is limited to internal clamp
Processing Circuit
- -
+
is much higher than the value
or PFC modulation duty is
I ch
closed when zero current
C
1
ton
R
2
and a ramp. The PFC
V
PFC
Modulation
ton
+
- -
for DCM
R
3
Turns off
MOSFET
ton
(eq.5a)
(eq.4)
from
V
1
C
ton
3
is
in

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