E-L6562D STMicroelectronics, E-L6562D Datasheet - Page 10

• Manufacturer Part Number: E-L6562D
• Description: IC CTRLR PFC TRANSITION 8-SOIC
• Manufacturer: STMicroelectronics

Specifications of E-L6562D

• Mode: Discontinuous (Transition)
• Frequency - Switching: 1MHz
• Current - Startup: 40µA
• Voltage - Supply: 10.3 V ~ 22 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Start-up Supply Current: 40uA
• Operating Supply Voltage (min): 10.3V
• Operating Supply Voltage (max): 22V
• Operating Temp Range: -40C to 150C
• Operating Temperature Classification: Automotive
• Package Type: SOIC
• Pin Count: 8
• Mounting: Surface Mount
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

L6562
the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the
instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the
top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-
tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a
conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-
regulator - thus making the action of the optimizer circuit little effective.
Figure 23. Typical application circuit (250W, Wide-range mains)
Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic
10/16
(85V to 265V)
(85V to 265V)
Vac
Vac
5A/250V
4A/250V
FUSE
FUSE
+
-
+
-
Boost Inductor Spec: EB0057-C (COILCRAFT)
Boost Inductor Spec (ITACOIL E2543/E)
STBR606
BRIDGE
BRIDGE
DF06M
E25x13x7 core, 3C85 ferrite
1.5 mm gap for 0.7 mH primary inductance
Primary: 105 turns 20x0.1 mm
Secondary: 11 turns 0.1 mm
0.47 µF
400V
400V
1 µF
22 kΩ
10 kΩ
C1
C1
R3
R3
1.5 MΩ
1.5 MΩ
750 kΩ
750 k Ω
180 kΩ
180 kΩ
10nF
10nF
C2
C2
R1
R2
R1
R2
R4
R4
180 kΩ
180 k Ω
22 µF
22 µF
R5
C29
R5
C29
25V
25V
1N5248B
1N5248B
1N4150
1N4150
D2
D2
D8
D8
C5 12 nF
C5 12 nF
100 nF
100 nF
C4
C4
8
3
8
3
100 Ω
100 Ω
68 kΩ
68 kΩ
R14
R14
R6
R6
5
5
L6562
L6562
D3 1N5406
2
6
2
6
T
T
330 nF
680 nF
C23
C23
C3 680 nF
C3 2.2 µF
R50 12 k Ω
R50 10 kΩ
4
4
1
1
7
7
33 Ω
10 Ω
R7
R7
0.82 Ω
0.6 W
0.33Ω
R9
R9
1W
STP8NM50
STTH1L06
STTH5L06
7 °C/W heat sink
0.82 Ω
0.6 W
0.33Ω
R10
MOS
STP12NM50
R10
1W
D1
D1
MOS
9.53 k Ω
9.53 kΩ
2.5 Ω
NTC
2.5 Ω
NTC
R13
R13
750 k Ω
750 k Ω
750 kΩ
750 kΩ
R11
R12
R11
R12
Po=80W
47 µF
100 µF
Vo=400V
450V
Vo=400V
Po=250W
450V
C6
C6
-
-