E-L6563TR STMicroelectronics, E-L6563TR Datasheet - Page 27

• Manufacturer Part Number: E-L6563TR
• Description: IC CTRLR PFC TRANSITION 14-SOIC
• Manufacturer: STMicroelectronics

Specifications of E-L6563TR

• Mode: Discontinuous (Transition)
• Current - Startup: 50µA
• Voltage - Supply: 10.3 V ~ 22 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 25 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Switching: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

L6563 - L6563A
6.6
Figure 40. 80W, wide-range-mains PFC pre-regulator with tracking boost function active
Figure 41. Tracking boost and voltage feedforward blocks
(88V to 264V)
Vac
4A/250V
FUSE
Inductor saturation detection (L6563 only)
Boost inductor's hard saturation may be a fatal event for a PFC pre-regulator: the current
upslope becomes so large (50-100 times steeper, see
sense propagation delay the current may reach abnormally high values. The voltage drop
caused by this abnormal current on the sense resistor reduces the gate-to-source voltage,
so that the MOSFET may work in the active region and dissipate a huge amount of power,
which leads to a catastrophic failure after few switching cycles.
However, in some applications such as ac-dc adapters, where the PFC pre-regulator is
turned off at light load for energy saving reasons, even a well-designed boost inductor may
occasionally slightly saturate when the PFC stage is restarted because of a larger load
demand. This happens when the restart occurs at an unfavorable line voltage phase, so that
the output voltage may drop significantly below the rectified peak voltage. As a result, in the
+
-
Vout
4 x 1N4007
BRIDGE
I
I
R1
R2
R1
R2
51.1 k Ω
INV
0.22 µF
400V
R2
C1
1
3.3 M Ω
3.3 M Ω
9.5V
R1a
R1b
I
TBO
2.2nF
C2
2.5V
Supply Voltage
10.3 to 22V
22 m F
25V
C3
+
-
1:1 CURRENT
E/A
L6563A
MIRROR
L6563
COMP
470 nF
C4
14
3
12
8
I
TBO
T
5
68 k Ω
2
9
R3
10
390 k Ω
11
L6563
R10
MULTIPLIER
6
R
TBO
T
6
2
21 k Ω
reference
R4
current
3V
62 k Ω
C6 100 nF
R5
7
1
13
4
10 nF
1/V
C
C7
+
1 µF
-
VFF
C5
FF
Figure
2
10 Ω
R6
0.68 Ω
R7a,b
1/4 W
5
"ideal"
diode
9.5V
42) that during the current
STTH1L06
R
STP8NM50
3
FF
D1
MOS
Application information
MULT
Rectified mains
R5
R6
47.5 k Ω
1 M Ω
1 M Ω
NTC
R8a
R8b
R9
34.8 k Ω
3.3 M Ω
3.3 M Ω
R10a
R10b
R11
Vo=200 to 385 V
Po=80W
27/39
56 µF
400V
C6