LTC3586EUFE-1#TRPBF Linear Technology, LTC3586EUFE-1#TRPBF Datasheet - Page 6

IC POWER MANAGER USB 38-QFN

LTC3586EUFE-1#TRPBF

Manufacturer Part Number
LTC3586EUFE-1#TRPBF
Description
IC POWER MANAGER USB 38-QFN
Manufacturer
Linear Technology
Datasheet

Specifications of LTC3586EUFE-1#TRPBF

Applications
Handheld/Mobile Devices
Voltage - Supply
4.35 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
38-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-

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Manufacturer:
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elecTrical characTerisTics
LTC3586/LTC3586-1
temperature range, otherwise specifications are at T
V
SYMBOL
R
R
I
I
R
D
t
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3586E/LTC3586E-1 are guaranteed to meet performance
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3: The LTC3586E/LTC3586E-1 include overtemperature protection
that is intended to protect the device during momentary overload
conditions. Junction temperature will exceed 125°C when overtemperature
protection is active. Continuous operation above the specified maximum
operating junction temperature may impair device reliability.
Typical perForMance characTerisTic

LEAK(P)4
LEAK(N)4
SS4
VOUT4
DS(ON)P4
DS(ON)N4
BOOST(MAX)
OUT4
1.0
0.8
0.4
0.2
0.6
0
= 5V, R
0
Ideal Diode V-I Characteristics
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
EXTERNAL VISHAY
Si2333 PMOS
0.04
PROG
FORWARD VOLTAGE (V)
PARAMETER
PMOS R
NMOS R
PMOS Switch Leakage
NMOS Switch Leakage
V
Maximum Boost Duty Cycle
Soft-Start Time
= 1k, R
OUT4
0.08
Pull-Down in Shutdown
DS(ON)
DS(ON)
CLPROG
0.12
INTERNAL IDEAL
DIODE ONLY
0.16
V
V
= 3.01k, unless otherwise noted.
BUS
BUS
= 0V
= 5V
3586 G01
0.20
0.25
0.20
0.10
0.05
0.15
0
2.7
A
Ideal Diode Resistance
vs Battery Voltage
CONDITIONS
Synchronous Switch
Main Switch
Synchronous Switch
Main Switch
= 25°C. V
3.0
The
INTERNAL IDEAL DIODE
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
BATTERY VOLTAGE (V)
EXTERNAL VISHAY
l
BUS
Si2333 PMOS
3.3
denotes the specifications which apply over the full operating
= 5V, BAT = 3.8V, V
Note 4: Total input current is the sum of quiescent current, I
measured current given by:
Note 5: The current limit features of this part are intended to protect the
IC from short term or intermittent fault conditions. Continuous operation
above the maximum specified pin current rating may result in device
degradation or failure.
Note 6: h
with indicated PROG resistor.
Note 7: FBx above regulation such that regulator is in sleep. Specification
does not include resistive divider current reflected back to V
Note 8: Guaranteed by design.
3.6
V
CLPROG
C/10
3.9
/R
is expressed as a fraction of measured full charge current
(T
CLPROG
3586 G02
A
= 25°C unless otherwise noted)
4.2
IN1
• (h
= V
CLPROG
IN2
4.50
4.25
3.50
4.00
3.75
3.25
= V
0
+1)
Output Voltage vs Output Current
(Battery Charger Disabled)
IN3
BAT = 3.4V
MIN
BAT = 4V
–1
–1
= V
200
IN4
OUTPUT CURRENT (mA)
= V
0.375
0.25
0.17
TYP
400
10
91
OUT3
= 3.8V,
600
MAX
94
1
1
INX
VBUSQ
.
V
5x MODE
800
BUS
, and
= 5V
3586 G03
UNITS
3586fb
1000
ms
µA
µA
%
Ω
Ω

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