ISL6530CBZ-T Intersil, ISL6530CBZ-T Datasheet

IC CONTROLLER INTEL 24SOIC

ISL6530CBZ-T

Manufacturer Part Number
ISL6530CBZ-T
Description
IC CONTROLLER INTEL 24SOIC
Manufacturer
Intersil
Datasheet

Specifications of ISL6530CBZ-T

Applications
Controller, Intel Pentium® III, IV
Voltage - Input
4.5 ~ 5.5 V
Number Of Outputs
2
Voltage - Output
2.5V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
24-SOIC (7.5mm Width)
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ISL6530CBZ-TTR
Dual 5V Synchronous Buck Pulse-Width
Modulator (PWM) Controller for DDRAM
Memory V
The ISL6530 provides complete control and protection for
dual DC-DC converters optimized for high-performance
DDRAM memory applications. It is designed to drive low
cost N-channel MOSFETs in synchronous-rectified buck
topology to efficiently generate 2.5V V
DDRAM memory, V
and V
the control, output adjustment, monitoring and protection
functions into a single package.
The V
through an integrated precision voltage reference. The V
output is precisely regulated to 1/2 the memory power
supply, with a maximum tolerance of ±1% over temperature
and line voltage variations. V
During V2_SD sleep mode, the V
a low power window regulator.
The ISL6530 provides simple, single feedback loop, voltage-
mode control with fast transient response. It includes two
phase-locked 300kHz triangle-wave oscillators which are
displaced 90
PWM regulators. The regulators feature error amplifiers with
a 15MHz gain-bandwidth product and 6V/µs slew rate which
enables high converter bandwidth for fast transient
performance. The resulting PWM duty ratio ranges from 0%
to 100%.
The ISL6530 protects against over-current conditions by
inhibiting PWM operation. The ISL6530 monitors the current
in the V
MOSFET which eliminates the need for a current sensing
resistor.
Ordering Information
* Add “-T” suffix for tape and reel option.
NOTE: Intersil Pb-free products employ special Pb-free material sets; molding
compounds/die attach materials and 100% matte tin plate termination finish, which are
RoHS compliant and compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.
ISL6530CB*
ISL6530CBZ*
(See Note)
ISL6530CR*
ISL6530CRZ*
(See Note)
ISL6530EVAL1, 2
PART NUMBER
TT
DDQ
DDQ
for signal termination. The ISL6530 integrates all of
output of the converter is maintained at 2.5V
o
regulator by using the r
DDQ
to minimize interference between the two
REF
Evaluation Board
RANGE(
and V
0 to 70
0 to 70
0 to 70
0 to 70
TEMP
for DDRAM differential signalling,
®
TT
o
TT
C)
1
accurately tracks V
TT
Termination
24 Lead SOIC
24 Lead SOIC
(Pb-free)
32 Lead 5x5 QFN
32 Lead 5x5 QFN
(Pb-free)
DS(ON)
Data Sheet
output is maintained by
PACKAGE
DDQ
for powering
of the upper
REF
M24.3
M24.3
L32.5x5
L32.5x5
DWG. #
PKG.
.
1-888-INTERSIL or 321-724-7143
REF
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Provides V
• Excellent voltage regulation
• Supports ‘S3’ sleep mode
• Fast transient response
• Operates from +5V input
• Overcurrent fault monitor on VDD
• Drives inexpensive N-Channel MOSFETs
• Small converter size
• 24 Lead, SOIC or 32 Lead, 5mm×5mm QFN
• Pb-Free Available (RoHS Compliant)
Applications
• V
• High-power tracking DC-DC regulators
November 15, 2004
channel DDRAM memory systems
- V
- V
- V
- V
- Full 0% to 100% duty ratio
- Does not require extra current sensing element
- Uses MOSFET’s r
- 300kHz fixed frequency oscillator
systems
- Main Memory in AMD® Athlon™ and K8™, Pentium®
- Video memory in graphics systems
DDQ
to minimize wake-up time
III, Pentium IV, Transmeta, PowerPC™, AlphaPC™, and
UltraSparc® based computer systems
DDQ
REF
TT
TT
, V
All other trademarks mentioned are the property of their respective owners.
= V
is held at V
|
= (V
= 2.5V ±2% over full operating range
TT
Intersil (and design) is a registered trademark of Intersil Americas Inc.
REF
DDQ
, and VREF regulation for DDRAM memory
Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved.
DDQ
± 30mV
, V
÷2) ±1% over full operating range
DDQ
REF
DS(ON)
, and V
÷2 via low power window regulator
TT
voltages for one- and two-
ISL6530
FN9052.2

Related parts for ISL6530CBZ-T

ISL6530CBZ-T Summary of contents

Page 1

... DDQ DS(ON) MOSFET which eliminates the need for a current sensing resistor. Ordering Information TEMP o PART NUMBER RANGE( C) PACKAGE ISL6530CB Lead SOIC ISL6530CBZ Lead SOIC (See Note) (Pb-free) ISL6530CR Lead 5x5 QFN ISL6530CRZ Lead 5x5 QFN (See Note) (Pb-free) ISL6530EVAL1, 2 Evaluation Board * Add “ ...

Page 2

Pinouts 24 LEAD (SOIC) TOP VIEW 24 UGATE1 1 23 BOOT1 2 22 PHASE1 3 21 VREF 4 20 FB1 COMP1 18 7 SENSE1 17 VREF_IN GNDA 15 PHASE2 BOOT2 13 ...

Page 3

Block Diagram PGOOD FB1 COMP1 SENSE1 VREF_IN + VREF - FB2 COMP2 SENSE2 V2_SD 3 ISL6530 OCSET/SD VCC POWER-ON RESET (POR) + SOFT- - 40µA START OVER- CURRENT PWM ERROR COMPARATOR AMP INHIBIT + + - - PWM 0.8V REFERENCE ...

Page 4

Typical Application +5V R OCSET OCSET/SD RESET GNDA SLEEP V2_SD VREF_IN V REF (.5xV ) DDQ VREF COMP1 FB1 R FB1 SENSE1 4 ISL6530 PGOOD VCC PGOOD BOOT1 UGATE1 PHASE1 PVCC1 LGATE1 PGND1 ISL6530 BOOT2 UGATE2 PHASE2 LGATE2 PGND2 COMP2 ...

Page 5

Absolute Maximum Ratings Supply Voltage +7.0V CC ...

Page 6

Functional Pin Description 24 LEAD (SOIC) TOP VIEW 24 UGATE1 1 23 BOOT1 2 22 PHASE1 3 21 VREF 4 20 FB1 COMP1 18 7 SENSE1 17 VREF_IN GNDA 15 PHASE2 ...

Page 7

While the V supply “floats” held to about 50 via a low current window regulator which drives V DDQ via the SENSE2 pin. The window regulator can overcome least ±10mA of leakage ...

Page 8

TIME FIGURE 2. SOFT-START INTERVAL Shoot-Through Protection A shoot-through condition occurs when both the upper MOSFET and lower MOSFET are turned on simultaneously, effectively shorting the input voltage to ground. To protect the regulators from ...

Page 9

One method that may be employed to bypass the internal V reference generation is to supply an external reference TT directly to the V pin. When doing this the SENSE1 pin REF_IN must remain unconnected. Caution must be exercised when ...

Page 10

To avoid over-current tripping in the DS(ON) normal operating load range, find the R the equation above with: 1. The maximum r at the highest junction temperature. DS(ON) 2. The minimum I from the specification table. OCSET > ...

Page 11

Use copper filled polygons on the top and bottom circuit layers for the phase nodes. Use the remaining printed circuit layers for small signal wiring. The wiring traces from the GATE pins to the MOSFET gates should be kept ...

Page 12

DRIVER OSC PWM COMPARATOR - DRIVER DV + OSC E REFERENCE ERROR AMP DETAILED COMPENSATION COMPONENTS COMP ISL6530 REFERENCE FIGURE 8. VOLTAGE-MODE ...

Page 13

Output Inductor Selection The output inductor is selected to meet the output voltage ripple requirements and minimize the converter’s response time to the load transient. The inductor value determines the converter’s ripple current and the ripple voltage is a function ...

Page 14

Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air ...

Page 15

ISL6530 DC-DC Converter Application Circuit Figure 11 shows an application circuit for a DDR SDRAM power supply, including V (+2.5V) and V DDQ Detailed information on the circuit, including a complete Bill- V2_SD PGOOD VREF VREF_IN C 30 100pF GNDA ...

Page 16

Small Outline Plastic Packages (SOIC) N INDEX 0.25(0.010) H AREA E - SEATING PLANE - -C- α µ 0.10(0.004) 0.25(0.010 NOTES: 1. Symbols are defined in ...

Page 17

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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