IC PWR SUPPLY DDR 28-TQFN

MAX8632ETI+T

Manufacturer Part NumberMAX8632ETI+T
DescriptionIC PWR SUPPLY DDR 28-TQFN
ManufacturerMaxim Integrated Products
MAX8632ETI+T datasheet
 


Specifications of MAX8632ETI+T

ApplicationsController, DDRVoltage - Input2 ~ 28 V
Number Of Outputs1Voltage - Output1.8V, 2.5V, 0.7 ~ 5.5 V
Operating Temperature-40°C ~ 85°CMounting TypeSurface Mount
Package / Case28-TQFN Exposed PadOutput Voltage1.8 V, 2.5 V, 0.7 V to 5.5 V
Output Current15 AInput Voltage2 V to 28 V
Mounting StyleSMD/SMTMaximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
ELECTRICAL CHARACTERISTICS (continued)
= STBY = V
(V
= +15V, V
= AV
= V
SHDN
IN
DD
DD
= GND, PGND1 = PGND2 = LX = GND, TON = OPEN, V
are at T
= +25°C.) (Note 1)
A
PARAMETER
SYMBOL
REFERENCE
Reference Voltage
Reference Load Regulation
REF Undervoltage Lockout
FAULT DETECTION
OVP Trip Threshold
(Referred to Nominal V
)
OUT
UVP Trip Threshold
(Referred to Nominal V
)
OUT
POK1 Trip Threshold
(Referred to Nominal V
)
OUT
POK2 Trip Threshold
(Referred to Nominal V
VTTS
and V
)
VTTR
POK2 Disable Threshold
(Measured at REFIN)
UVP Blanking Time
OVP, UVP, POK_ Propagation
Delay
POK_ Output Low Voltage
POK_ Leakage Current
ILIM Adjustment Range
ILIM Input Leakage Current
Current-Limit Threshold (Fixed)
PGND1 to LX
Current-Limit Threshold
(Adjustable) PGND1 to LX
Current-Limit Threshold (Fixed,
Negative Direction) PGND1 to LX
Current-Limit Threshold
(Adjustable, Negative Direction)
PGND1 to LX
Zero-Crossing Detection
Threshold PGND1 to LX
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
_______________________________________________________________________________________
= V
= 5V, V
= V
BST
ILIM
OUT
= V
, T
= -40°C to +85°C, unless otherwise noted. Typical values
VTTS
VTT
A
CONDITIONS
V
AV
= 4.5V to 5.5V; I
= 0
REF
DD
REF
I
= 0 to 50µA
REF
V
rising
REF
Hysteresis
UVP/OVP = AV
DD
Lower level, falling edge, 1% hysteresis
Upper level, rising edge, 1% hysteresis
Lower level, falling edge, 1% hysteresis
Upper level, rising edge, 1% hysteresis
V
rising (hysteresis = 75mV typ)
REFIN
From rising edge of SHDN
I
= 4mA
SINK
V
= 5.5V, V
= 0.8V, V
POK_
FB
V
ILIM
V
= 2V
ILIM
SKIP = AV
DD
SKIP = AV
, V
= 2V
DD
ILIM
= 2.5V, UVP/OVP = TP0 = FB = SKIP
= V
REFIN
VTTI
MIN
TYP
MAX
1.98
2
2.02
0.01
1.93
300
112
116
65
70
87
90
107
110
87.5
90
92.5
107.5
110
112.5
0.7
10
20
10
= 1.3V
VTTS
0.25
2.00
45
50
170
200
-75
-60
-250
3
+160
15
UNITS
V
V
V
mV
120
%
75
%
93
%
113
%
0.9
V
40
ms
µs
0.3
V
1
µA
V
0.1
µA
55
mV
235
mV
-45
mV
mV
mV
°C
°C
3