IC PWR SUPPLY DDR 28-TQFN

MAX8632ETI+T

Manufacturer Part NumberMAX8632ETI+T
DescriptionIC PWR SUPPLY DDR 28-TQFN
ManufacturerMaxim Integrated Products
MAX8632ETI+T datasheet
 


Specifications of MAX8632ETI+T

ApplicationsController, DDRVoltage - Input2 ~ 28 V
Number Of Outputs1Voltage - Output1.8V, 2.5V, 0.7 ~ 5.5 V
Operating Temperature-40°C ~ 85°CMounting TypeSurface Mount
Package / Case28-TQFN Exposed PadOutput Voltage1.8 V, 2.5 V, 0.7 V to 5.5 V
Output Current15 AInput Voltage2 V to 28 V
Mounting StyleSMD/SMTMaximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
ELECTRICAL CHARACTERISTICS (continued)
= STBY = V
(V
= +15V, V
= AV
= V
SHDN
IN
DD
DD
= GND, PGND1 = PGND2 = LX = GND, TON = OPEN, V
are at T
= +25°C.) (Note 1)
A
PARAMETER
SYMBOL
MOSFET DRIVERS
DH Gate-Driver On-Resistance
DL Gate-Driver On-Resistance in
High State
DL Gate-Driver On-Resistance in
Low State
Dead Time (Additional to
Adaptive Delay)
INPUTS AND OUTPUTS
Logic Input Threshold
(SHDN, STBY, SKIP)
Logic Input Current
(SHDN, STBY, SKIP)
Dual-Mode™ Input Logic
Levels (FB)
Input Bias Current (FB)
Four-Level Input Logic Levels
(TON, OVP/UVP)
Logic Input Current
(TON, OVP/UVP)
OUT Input Resistance
OUT Discharge-Mode
On-Resistance
DL Turn-On Level During
Discharge Mode
(Measured at OUT)
Dual Mode is a trademark of Maxim Integrated Products, Inc.
4
_______________________________________________________________________________________
= V
= 5V, V
= V
= V
BST
ILIM
OUT
REFIN
VTTI
= V
, T
= -40°C to +85°C, unless otherwise noted. Typical values
VTTS
VTT
A
CONDITIONS
V
- V
= 5V
BST
LX
DH falling to DL rising
DL falling to DH rising
Rising edge
Hysteresis
Low (2.5V output)
High (1.8V output)
High
Floating
REF
Low
FB = GND
FB = AV
DD
FB adjustable mode
= 2.5V, UVP/OVP = TP0 = FB = SKIP
MIN
TYP
MAX
UNITS
1
4
1
4
0.5
3
30
ns
50
1.20
1.7
2.20
V
225
mV
-1
+1
µA
0.05
V
2.1
-0.1
+0.1
µA
AV
-
DD
0.4
3.15
3.85
V
1.65
2.35
0.5
-3
+3
µA
90
175
350
70
135
270
kΩ
400
800
1600
10
25
0.01
0.1
0.20
V