SI8462AB-A-IS1 Silicon Laboratories Inc, SI8462AB-A-IS1 Datasheet

IC ISOLATOR DGTL 6CH 16SOIC

SI8462AB-A-IS1

Manufacturer Part Number
SI8462AB-A-IS1
Description
IC ISOLATOR DGTL 6CH 16SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Datasheet

Specifications of SI8462AB-A-IS1

Inputs - Side 1/side 2
4/2
Number Of Channels
6
Isolation Rating
2500Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
1Mbps
Propagation Delay
35ns
Output Type
Logic
Package / Case
16-SOIC (3.9mm Width)
Operating Temperature
-40°C ~ 125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I S O
Features
Applications
Safety Regulatory Approvals
Description
Silicon Lab's family of ultra-low-power digital isolators are CMOS
devices offering substantial data rate, propagation delay, power, size,
reliability, and external BOM advantages when compared to legacy
isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges throughout their
service life. For ease of design, only VDD bypass capacitors are
required.
Data rates up to 150 Mbps are supported, and all devices achieve
worst-case propagation delays of less than 10 ns. All products are
safety certified by UL, CSA, and VDE and support withstand voltages
of up to 2.5 kVrms. These devices are available in a 16-pin narrow-
body SOIC package.
Rev. 1.3 3/11
High-speed operation

No start-up initialization required
Wide Operating Supply Voltage:
2.70–5.5 V
Wide Operating Supply Voltage:
2.70–5.5V
Ultra low power (typical)
5 V Operation:


2.70 V Operation:


High electromagnetic immunity
Industrial automation systems
Hybrid electric vehicles
Isolated switch mode supplies
UL 1577 recognized

CSA component notice 5A
approval

(reinforced insulation )
DC to 150 Mbps
< 1.6 mA per channel at 1 Mbps
< 6 mA per channel at 100 Mbps
< 1.4 mA per channel at 1 Mbps
< 4 mA per channel at 100 Mbps
Up to 2500 V
IEC 60950-1, 61010-1
P R O
L
RMS
O W
for 1 minute
P
O W E R
Copyright © 2011 by Silicon Laboratories
Up to 2500 V
60-year life at rated working
voltage
Precise timing (typical)





Transient Immunity 25 kV/µs
Wide temperature range

RoHS-compliant packages

Isolated ADC, DAC
Motor control
Power inverters
Communications systems
VDE certification conformity

S
<10 ns worst case
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
6 ns minimum pulse width
–40 to 125 °C at 150 Mbps
SOIC-16 narrow body
IEC 60747-5-2
(VDE0884 Part 2)
I X
- C
RMS
H A N N E L
isolation
D
S i 8 4 6 0 / 6 1 / 6 2 / 6 3
I G I TA L
Ordering Information:
I
See page 29.
S O L A T O R
Si8460/61/62/63

Related parts for SI8462AB-A-IS1

SI8462AB-A-IS1 Summary of contents

Page 1

... IEC 60950-1, 61010-1  (reinforced insulation ) Description Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering substantial data rate, propagation delay, power, size, reliability, and external BOM advantages when compared to legacy isolation technologies. The operating parameters of these products remain stable across wide temperature ranges throughout their service life ...

Page 2

Si8460/61/62/63 2 Rev. 1.3 ...

Page 3

T C ABLE O F ONTENTS Section 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

Si8460/61/62/63 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Ambient Operating Temperature* Supply Voltage *Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply voltage. Table 2. Absolute Maximum Ratings Parameter ...

Page 5

Table 3. Electrical Characteristics ( V±10 V±10%, T DD1 DD2 A Parameter Symbol High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 1 Output Impedance ...

Page 6

Si8460/61/62/63 Table 3. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol 1 Mbps Supply Current (All inputs = 500 kHz square wave all outputs) Si8460Ax, Bx ...

Page 7

Table 3. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 ...

Page 8

Si8460/61/62/63 Table 3. Electrical Characteristics (Continued V±10 V±10%, T DD1 DD2 A Parameter Symbol All Models Output Rise Time Output Fall Time Common Mode Transient CMTI Immunity 3 Start-up Time Notes: 1. The nominal ...

Page 9

Table 4. Electrical Characteristics (V = 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 1 Output Impedance DC Supply ...

Page 10

Si8460/61/62/63 Table 4. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter 1 Mbps Supply Current (All inputs = 500 kHz square wave all outputs) Si8460Ax DD1 ...

Page 11

Table 4. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 V DD2 ...

Page 12

Si8460/61/62/63 Table 4. Electrical Characteristics (Continued 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter All Models Output Rise Time Output Fall Time Common Mode Transient Immunity at Logic Low Output 3 Start-up Time Notes: 1. The ...

Page 13

Table 5. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low ...

Page 14

Si8460/61/62/63 Table 5. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter 1 Mbps Supply Current (All inputs = 500 kHz square wave, CI ...

Page 15

Table 5. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter 100 Mbps Supply Current (All inputs = 50 MHz square wave ...

Page 16

Si8460/61/62/63 Table 5. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter All Models Output Rise Time Output Fall Time Common Mode Transient Immunity ...

Page 17

Table 7. Insulation and Safety-Related Specifications Parameter 1 Nominal Air Gap (Clearance) Nominal External Tracking (Creepage) Minimum Internal Gap (Internal Clearance) Tracking Resistance (Proof Tracking Index) Erosion Depth 2 Resistance (Input-Output) 2 Capacitance (Input-Output) 3 Input Capacitance Notes: 1. The ...

Page 18

Si8460/61/62/63 Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB* Parameter Maximum Working Insulation Voltage Input to Output Test Voltage Transient Overvoltage Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance 500 *Note: ...

Page 19

Table 11. Thermal Characteristics Parameter Symbol IC Junction-to-Air Thermal Resistance 500 400 300 200 100 0 0 Figure 2. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Test Condition  JA ...

Page 20

Si8460/61/62/63 2. Functional Description 2.1. Theory of Operation The operation of an Si846x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path ...

Page 21

Eye Diagram Figure 5 illustrates an eye-diagram taken on an Si8460. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8460 ...

Page 22

Si8460/61/62/63 2.3. Device Operation Device behavior during startup, normal operation, and shutdown is shown in Table 12. Table 12. Si846x Logic Operation Table V VDDI VDDO I 1,3,4 1,3,4 1,2 State State Input ...

Page 23

Layout Recommendations To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 V separated from the safety extra-low voltage circuits (SELV is a circuit with <30 V (creepage/clearance component, such as a ...

Page 24

Si8460/61/62/63 2.5. Typical Performance Characteristics The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Tables 3, 4, and 5 for actual specification limits ...

Page 25

Data Rate (Mbps) Figure 12. Si8463 Typical V DD1 Current vs. Data Rate 5, ...

Page 26

Si8460/61/62/63 Figure 14. Si84xx Time-Dependent Dielectric Breakdown 26 Rev. 1.3 ...

Page 27

... Power Supply Bypass Capacitors (Revision A and Revision B) When using the ISOpro isolators with power supplies > 4.5 V, sufficient VDD bypass capacitors must be present on both the VDD1 and VDD2 pins to ensure the VDD rise time is less than 0.5 V/µs (which is > 9 µs for a > 4.5 V supply). Although rise time is power supply dependent, > ...

Page 28

Si8460/61/62/63 4. Pin Descriptions DD1 DD2 DD1 RCVR XMITR XMITR RCVR XMITR RCVR ...

Page 29

... Si8463BA-B-IS1 3 Si8460AB-B-IS1 6 Si8460BB-B-IS1 6 Si8461AB-B-IS1 5 Si8461BB-B-IS1 5 Si8462AB-B-IS1 4 Si8462BB-B-IS1 4 Si8463AB-B-IS1 3 Si8463BB-B-IS1 3 Notes: 1. All packages are RoHS-compliant. Moisture sensitivity level is MSL2A with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications and peak solder temperature. 2. Revision A devices are supported for existing designs, but Revision B is recommended for all new designs. ...

Page 30

... Si8463BA-A-IS1 3 Si8460AB-A-IS1 6 Si8460BB-A-IS1 6 Si8461AB-A-IS1 5 Si8461BB-A-IS1 5 Si8462AB-A-IS1 4 Si8462BB-A-IS1 4 Si8463AB-A-IS1 3 Si8463BB-A-IS1 3 Notes: 1. All packages are RoHS-compliant. Moisture sensitivity level is MSL2A with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications and peak solder temperature. 2. Revision A devices are supported for existing designs, but Revision B is recommended for all new designs. ...

Page 31

Package Outline: 16-Pin Narrow Body SOIC Figure 15 illustrates the package details for the Si846x in a 16-pin narrow-body SOIC (SO-16). Table 15 lists the values for the dimensions shown in the illustration. Figure 15. 16-pin Small Outline Integrated ...

Page 32

Si8460/61/62/63 Table 15. Package Diagram Dimensions (Continued) h θ aaa bbb ccc ddd Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid ...

Page 33

Land Pattern: 16-Pin Narrow Body SOIC Figure 16 illustrates the recommended land pattern details for the Si846x in a 16-pin narrow-body SOIC. Table 16 lists the values for the dimensions shown in the illustration. Figure 16. 16-Pin Narrow Body ...

Page 34

Si8460/61/62/63 8. Top Marking: 16-Pin Narrow Body SOIC Figure 17. 16-Pin Narrow Body SOIC Top Marking Table 17. 16-Pin Narrow Body SOIC Top Marking Table Line 1 Marking: Base Part Number Ordering Options (See Ordering Guide for more information). Line ...

Page 35

OCUMENT HANGE IST Revision 0.1 to Revision 0.2  Updated all specs to reflect latest silicon.  Added "3. Errata and Design Migration Guidelines" on page 27.  Added "8. Top Marking: 16-Pin Narrow Body SOIC" on ...

Page 36

... Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap- plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages. Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders. ...

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