OPTOCOUPLER 2.0A 250KHZ 8-DIP

HCPL-3180-000E

Manufacturer Part NumberHCPL-3180-000E
DescriptionOPTOCOUPLER 2.0A 250KHZ 8-DIP
ManufacturerAvago Technologies US Inc.
HCPL-3180-000E datasheet
 


Specifications of HCPL-3180-000E

Package / Case8-DIP (0.300", 7.62mm)Voltage - Isolation3750Vrms
Number Of Channels1, UnidirectionalCurrent - Output / Channel2.5A
Propagation Delay High - Low @ If150ns @ 10mACurrent - Dc Forward (if)16mA
Input TypeDCOutput TypeGate Driver
Mounting TypeThrough HoleIsolation Voltage3750 Vrms
Maximum Fall Time0.025 usMaximum Forward Diode Current25 mA
Minimum Forward Diode Voltage1.2 VOutput DeviceIntegrated Photo IC
Configuration1 ChannelMaximum Forward Diode Voltage1.8 V
Maximum Reverse Diode Voltage5 VMaximum Power Dissipation295 mW
Maximum Operating Temperature+ 100 CMinimum Operating Temperature- 40 C
Number Of Elements1Forward Voltage1.8V
Forward Current25mAPackage TypePDIP
Operating Temp Range-40C to 100CPower Dissipation295mW
Propagation Delay Time200nsPin Count8
MountingThrough HoleReverse Breakdown Voltage5V
Operating Temperature ClassificationIndustrialNo. Of Channels1
Optocoupler Output TypeGate DriveInput Current16mA
Output Voltage20VOpto Case StyleDIP
No. Of Pins8Common Mode Ratio10 KV/uS
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names516-1674-5  
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Selecting the Gate Resistor (R
) for HCPL-3180
g
Step 1: Calculate R
minimum from the I
g
R
in Figure 25 can be analyzed as a simple RC circuit with a voltage supplied
g
by the HCPL-3180.
V
– V
CC
OL
R
g
I
OLPEAK
20 – 3
=
2
= 8.5 Ω
The V
value of 3 V in the previous equation is the V
OL
2 A. (See Figure 6.)
Step 2: Check the HCPL-3180 power dissipation and increase R
The HCPL-3180 total power dissipation (P
power (P
) and the output power (P
E
P
= P
+ P
T
E
O
P
= I
* V
* Duty Cycle
E
F
F
P
= P
+ P
O
O(BIAS)
O(SWITCHING)
= I
* V
+ E
(R
;Q
) * f
CC
CC
SW
g
g
For the circuit in Figure 25 with I
(worst case) = 16 mA, R
F
Cycle = 80%, Q
= 100 nC, f = 200 kHz and T
g
P
= 16 mA * 1.8 V * 0.8 = 23 mW
E
P
= 4.5 mA * 20 V + 0.85 µ * 200 kHz
O
= 260 mW ≥ 226 mW (P
O(MAX)
The value of 4.5 mA for I
in the previous equation was obtained by derating
CC
the I
max of 6 mA to I
max at +75°C. Since P
CC
CC
the P
, R
must be increased to reduce the HCPL-3180 power dissipa-
O(MAX)
g
tion.
P
= P
– P
O(SWITCHING MAX)
O(MAX)
= 226 mW – 90 mW
= 136 mW
E
= P
SW(MAX)
O(SWITCHING MAX)
f
= 136 mW
200 kHz
= 0.68 µW
For Q
= 100 nC, a value of E
= 0.68 µW gives a R
g
sw
12
peak specification. The IGBT and
OL
at the peak current of
OL
if necessary.
g
) is equal to the sum of the emitter
T
).
O
= 10 Ω, Max Duty
g
= +75°C:
AMAX
@ 75°C = 250 mW (5°C * 4.8 mW/°C))
for this case is greater than
O
O(BIAS)
= 15 W.
g
2.0
1.8
Q
= 100 nC
g
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
— GATE RESISTANCE — Ω
R
g
Figure 26. Energy dissipated in the HCPL-3180 and for
each IGBT.