HCPL-3180-300E Avago Technologies US Inc., HCPL-3180-300E Datasheet - Page 12

• Manufacturer Part Number: HCPL-3180-300E
• Description: OPTOCOUPLER 2.0A 250KHZ GW 8-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of HCPL-3180-300E

• Package / Case: 8-SMD Gull Wing
• Voltage - Isolation: 3750Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 2.5A
• Propagation Delay High - Low @ If: 150ns @ 10mA
• Current - Dc Forward (if): 16mA
• Input Type: DC
• Output Type: Gate Driver
• Mounting Type: Surface Mount
• Isolation Voltage: 3750 Vrms
• Maximum Fall Time: 0.025 us
• Maximum Forward Diode Current: 25 mA
• Minimum Forward Diode Voltage: 1.2 V
• Output Device: Integrated Photo IC
• Configuration: 1 Channel
• Maximum Forward Diode Voltage: 1.8 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Number Of Elements: 1
• Forward Voltage: 1.8V
• Forward Current: 25mA
• Package Type: PDIP SMD
• Operating Temp Range: -40C to 100C
• Power Dissipation: 295mW
• Propagation Delay Time: 200ns
• Pin Count: 8
• Mounting: Surface Mount
• Reverse Breakdown Voltage: 5V
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 20V
• Opto Case Style: SMD
• No. Of Pins: 8
• Propagation Delay Low-high: 0.2µs
• Rohs Compliant: Yes
• Common Mode Ratio: 10 KV/uS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1675-5

Selecting the Gate Resistor (R
Step 1: Calculate R
R
by the HCPL-3180.
The V
2 A. (See Figure 6.)
Step 2: Check the HCPL-3180 power dissipation and increase R
The HCPL-3180 total power dissipation (P
power (P
For the circuit in Figure 25 with I
Cycle = 80%, Q
The value of 4.5 mA for I
the I
the P
tion.
For Q
12
g
in Figure 25 can be analyzed as a simple RC circuit with a voltage supplied
P
P
P
P
P
P
T
E
O
E
O
O(SWITCHING MAX)
CC
O(MAX)
OL
g
= P
= I
= P
= I
= 16 mA * 1.8 V * 0.8 = 23 mW
= 4.5 mA * 20 V + 0.85 µ * 200 kHz
= 260 mW ≥ 226 mW (P
= 100 nC, a value of E
max of 6 mA to I
value of 3 V in the previous equation is the V
E
F
CC
E
O(BIAS)
) and the output power (P
* V
E
+ P
, R
* V
SW(MAX)
F
g
O
CC
* Duty Cycle
g
must be increased to reduce the HCPL-3180 power dissipa-
+ P
= 100 nC, f = 200 kHz and T
+ E
g
O(SWITCHING)
minimum from the I
SW
R
g
CC
= P
= 226 mW – 90 mW
= 136 mW
= P
= 136 mW
= 0.68 µW
(R
CC
≥
=
= 8.5 Ω
g
) for HCPL-3180
g
V
200 kHz
max at +75°C. Since P
20 – 3
in the previous equation was obtained by derating
;Q
CC
O(MAX)
O(SWITCHING MAX)
sw
I
g
OLPEAK
– V
) * f
O(MAX)
2
= 0.68 µW gives a R
F
f
OL
(worst case) = 16 mA, R
– P
O
@ 75°C = 250 mW (5°C * 4.8 mW/°C))
).
O(BIAS)
OL
T
) is equal to the sum of the emitter
AMAX
peak specification. The IGBT and
O
= +75°C:
for this case is greater than
g
= 15 W.
OL
at the peak current of
g
= 10 Ω, Max Duty
g
if necessary.
Figure 26. Energy dissipated in the HCPL-3180 and for
each IGBT.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
R
g
10
— GATE RESISTANCE — Ω
20
30
Q
g
= 100 nC
40
50