TLP250(LF1,F) Toshiba, TLP250(LF1,F) Datasheet

PHOTOCOUPLER HS TRANS OUT 8-SMD

TLP250(LF1,F)

Manufacturer Part Number
TLP250(LF1,F)
Description
PHOTOCOUPLER HS TRANS OUT 8-SMD
Manufacturer
Toshiba
Datasheets

Specifications of TLP250(LF1,F)

Voltage - Isolation
2500Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
1.5A
Propagation Delay High - Low @ If
150ns @ 8mA
Current - Dc Forward (if)
20mA
Input Type
DC
Output Type
Push-Pull, Totem-Pole
Mounting Type
Surface Mount
Package / Case
8-SMD (300 mil)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP250FTR
TLP250FTR
TLP250LF1F
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
Truth Table
Input threshold current: I
Supply current (I
Supply voltage (V
Output current (I
Switching time (t
Isolation voltage: 2500V
UL recognized: UL1577, file No.E67349
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
Highest Permissible Over Voltage
(Note):When a EN60747-5-2 approved type is needed,
Input
LED
Please designate “Option(D4)”
lead DIP package.
On
Off
CC
pLH
O
CC
): ±1.5A (max.)
): 11mA(max.)
): 10
/t
pHL
rms
Tr1
On
Off
F
35V
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
): 0.5μs(max.)
=5mA(max.)
(min.)
Tr2
Off
On
TLP250
: 4000V
PK
PK
1
Schmatic
Pin Configuration (top view)
V
F
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
2+
3-
1
2
3
4
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
I
F
Weight: 0.54 g (typ.)
TOSHIBA
5 : GND
6 : V
7 : V
8 : V
O
O
CC
(Output)
11−10C4
8
6
5
7
2007-10-01
(T
(T
TLP250
Unit in mm
r
r
I
2)
CC
1)
I
O
7
8
6
5
V
V
GND
CC
V
O
O

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TLP250(LF1,F) Summary of contents

Page 1

... TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8 lead DIP package. − ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Electrical Characteristics Characteristic Input forward voltage Temperature coefficient of forward voltage Input reverse current Input capacitance “H” level Output current “L” level “H” level Output voltage “L” level “H” level Supply current “L” level Threshold input “Output L→H” current Threshold ...

Page 4

Switching Characteristics Characteristic L→H Propagation delay time H→L Output rise time Output fall time Common mode transient immunity at high level output Common mode transient immunity at low level output All typical values are 25°C Test Circuit ...

Page 5

Test Circuit pLH pHL 0.1μF F 100Ω Test Circuit 90% V ...

Page 6

I – 100 ° 0.5 0.3 0.1 0.05 0.03 0.01 1.4 1.8 1.0 1.2 1.6 Forward voltage V ( – ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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