CNY17-2 Vishay, CNY17-2 Datasheet - Page 6

• Manufacturer Part Number: CNY17-2
• Description: OPTOCOUPLER PHOTOTRANS 125% 6DIP
• Manufacturer: Vishay

Specifications of CNY17-2

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 22% @ 1mA
• Current Transfer Ratio (max): 125% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 10 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1266-5; CNY17-2GI; CNY17-2GI

CNY17
Vishay Semiconductors
www.vishay.com
6
Collector Current and Modulation Depth CNY17-1
Collector Current and Modulation Depth CNY17-2
Collector Current and Modulation Depth CNY17-3
icny17_14
icny17_15
icny17_13
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
1
Fig. 15 - Saturation Voltage vs.
1
1
I
I
F
F
= 3 x I
= 2 x I
V
V
V
CEsat
CEsat
CEsat
I
F
C
C
= f (I
= f (I
= f (I
= 2 x I
I
I
C
I
C
C
C
C
C
)
)
)
(mA)
C
10
10
(mA)
10
(mA)
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
F
I
I
= 3 x I
F
F
= I
= 3 x I
C
C
C
with Base Connection
100
100
100
[e-mail]
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
Collector Current and Modulation Depth CNY17-4
icny17_16
icny17_18
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
Fig. 16 - Saturation Voltage vs.
0
1
V
CEsat
25
P
Diode
= f (I
tot
Transistor
= f (T
I
I
F
C
T
C
= I
)
(mA)
A
50
10
(°C)
C
I
A
I
F
F
)
= 3 x I
= 2 x I
Document Number: 83606
C
C
75
Rev. 1.7, 04-Nov-10
100
100