H11G2TVM Fairchild Optoelectronics Group, H11G2TVM Datasheet

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H11G2TVM

Manufacturer Part Number
H11G2TVM
Description
OPTOCOUPLER PHOTOTRANS VDE 6-DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of H11G2TVM

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
500% @ 1mA
Voltage - Output
80V
Current - Dc Forward (if)
60mA
Vce Saturation (max)
1V
Output Type
Darlington with Base
Mounting Type
Through Hole
Package / Case
6-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current Transfer Ratio (max)
-
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
Applications
Schematic
High BV
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
High sensitivity to low input current
(Min. 500% CTR at I
Low leakage current at elevated temperature
(Max. 100µA at 80°C)
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
CATHODE
ANODE
N/C
CEO
1
2
3
F
= 1mA)
6 BASE
5
4
COLLECTOR
EMITTER
Package Outlines
General Description
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an inte-
gral base-emitter resistor to optimize elevated tempera-
ture characteristics.
September 2009
www.fairchildsemi.com

Related parts for H11G2TVM

H11G2TVM Summary of contents

Page 1

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features High BV CEO – Minimum 100V for H11G1M – Minimum 80V for H11G2M – Minimum 55V for H11G3M High sensitivity to low input current (Min. 500% CTR 1mA) F ...

Page 2

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure ...

Page 3

Electrical Characteristics Individual Component Characteristics Symbol Characteristic EMITTER V Forward Voltage F V Forward Voltage F Temp. Coefficient Reverse Breakdown R Voltage C Junction Capacitance J I Reverse Leakage R Current DETECTOR BV Breakdown Voltage CEO Collector ...

Page 4

Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Installation Classifications per DIN ...

Page 5

Typical Performance Curves Fig. 1 Output Current vs. Input Current 10 1 0.1 0.01 0.001 0 – LED INPUT CURRENT(mA) F Fig. 3 Output Current vs. Collector - Emitter Voltage 100 Normalized to ...

Page 6

Package Dimensions Through Hole 8.13–8. 6.10–6.60 Pin 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2007 ...

Page 7

Ordering Information Option No option S SR2 SR2V Marking Information Definitions ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 Order Entry Identifier (Example) H11G1M Standard Through Hole Device H11G1SM ...

Page 8

Carrier Tape Specification 4.5 0.20 0.30 21.0 0.1 0.1 MAX User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, ...

Page 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global ...

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