4N38 Fairchild Optoelectronics Group, 4N38 Datasheet

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4N38

Manufacturer Part Number
4N38
Description
OPTOCOUPLER TRANS-OUT HV 6-DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of 4N38

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
20% @ 2mA
Voltage - Output
80V
Current - Output / Channel
100mA
Current - Dc Forward (if)
80mA
Vce Saturation (max)
1V
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Transfer Ratio (max)
-
Other names
4N38QT
4N38QT

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DESCRIPTION
FEATURES
APPLICATIONS
TOTAL DEVICE
EMITTER
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
• High Voltage
• High isolation voltage
• Underwriters Laboratory (UL) recognized File# E90700
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ T
ABSOLUTE MAXIMUM RATINGS
- H11D1, H11D2, BV
- H11D3, H11D4, BV
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
Derate above 25°C
Derate above 25°C
CER
CER
= 300 V
= 200 V
A
= 25°C
A
= 25°C
PHOTOTRANSISTOR OPTOCOUPLERS
CATHODE
ANODE
N/C
1
2
3
6 BASE
5
4
COLLECTOR
EMITTER
Symbol
I
T
T
T
F
P
V
P
STG
OPR
SOL
(pk)
I
F
D
R
D
260 for 10 sec
-55 to +150
-55 to +100
Value
1.41
260
150
3.5
6.0
3.0
80
HIGH VOLTAGE
8/9/00
H11D1
H11D2
H11D3
H11D4
4N38
mW/°C
mW/°C
Units
mW
mW
mA
°C
°C
°C
200046A
V
A

Related parts for 4N38

4N38 Summary of contents

Page 1

... DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. FEATURES • High Voltage - H11D1, H11D2, BV ...

Page 2

... Collector to Emitter ( M" 100 ( Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values 25°C A PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Symbol H11D1 - H11D2 H11D3 - H11D4 V 4N38 H11D1 - H11D2 H11D3 - H11D4 V 4N38 H11D1 - H11D2 V H11D3 - H11D4 ( ° ...

Page 3

... SWITCHING TIMES Non-Saturated Turn-on Time Turn-off Time ISOLATION CHARACTERISTICS Characteristic Isolation Voltage Isolation Resistance Isolation Capacitance Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values 25°C A Fig.1 LED Forward Voltage vs. Forward Current 1.8 1.7 1.6 1.5 1 ...

Page 4

... Fig.5 Normalized Dark Current vs. Ambient Temperature Normalized to 100 V 10000 25˚C A 1000 V = 300 V CE 100 V = 100 0 AMBIENT TEMPERATURE (˚C) A PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Fig.4 Normalized Output Current vs. Temperature 1 0.1 -60 -40 -20 Normalized Collector-Base Current vs. Temperature 100 110 -60 -40 -20 HIGH VOLTAGE Normalized to: V ...

Page 5

... TYP NOTE All dimensions are in inches (millimeters) PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Package Dimensions (Surface Mount) 0.200 (5.08) 0.165 (4.18) 0.022 (0.56) 0.016 (0.41) 0.300 (7.62) TYP Lead Coplanarity : 0.004 (0.10) MAX Recommended Pad Layout for 0 ...

Page 6

... QT Carrier Tape Specifications (“D” Taping Orientation) 4.85 ± 0.20 13.2 ± 0.2 0.1 MAX NOTE All dimensions are in millimeters PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Order Entry Identifier .S .SD .W .300 .300W .3S .3SD 12.0 ± 0.1 4.0 ± 0.1 0.30 ± ...

Page 7

MARKING INFORMATION Definitions Reflow Profile (Black Package, No Suffix) 300 250 225 C peak 200 150 Time above 183° C, 60–150 sec 100 50 Ramp C/sec 0 0 0.5 1 1.5 ...

Page 8

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks.  ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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