H11A817ASD Fairchild Optoelectronics Group, H11A817ASD Datasheet

OPTOCOUPLER TRANS-OUT 4-SMD

H11A817ASD

Manufacturer Part Number
H11A817ASD
Description
OPTOCOUPLER TRANS-OUT 4-SMD
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of H11A817ASD

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
80% @ 5mA
Current Transfer Ratio (max)
160% @ 5mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
200mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
H11AA814 SERIES
PACKAGE
4
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814:
20-300%
H11AA814A: 50-150%
H11A617A:
40%-80%
H11A617B:
63%-125%
H11A617C:
100%-200%
H11A617D:
160%-320%
• Minimum BV
of 70V guaranteed
CEO
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
H11A617 SERIES
1
H11A817:
50-600%
H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
Page 1 of 9
OPTOCOUPLERS
H11A817 SERIES
H11AA814 SCHEMATIC
1
4
COLLECTOR
2
3 EMITTER
H11A617 & H11A817 SCHEMATIC
1
4
ANODE
COLLECTOR
CATHODE
2
3 EMITTER
11/18/03

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H11A817ASD Summary of contents

Page 1

H11AA814 SERIES PACKAGE 4 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium ...

Page 2

H11AA814 SERIES Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation (-55° °C) EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation (25°C ambient) ...

Page 3

H11AA814 SERIES TRANSFER CHARACTERISTICS DC Characteristic Test Conditions (I = ±1 mA ± Current Transfer Ratio ( mA mA, V ...

Page 4

H11AA814 SERIES Fig. 1 Normalized CTR vs. Forward Current 1.4 1.2 1 0.8 0.6 0.4 0 FORWARD CURRENT (mA) F Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature . ...

Page 5

H11AA814 SERIES Fig. 6 Collector Leakage Current vs. Ambient Temperature AMBIENT TEMPERATURE (˚C) A TEST CIRCUIT INPUT ...

Page 6

H11AA814 SERIES Package Dimensions (Through Hole) 0.270 (6.86) 0.250 (6.35) 0.270 (6.86) 0.250 (6.35) 0.190 (4.83) 0.175 (4.45) 0.200 (5.08) 0.115 (2.92) 0.154 (3.90) 0.020 (0.51) 0.120 (3.05) MIN 15 0.300 (7.62) 0.100 (2.54) TYP Package Dimensions (0.4” Lead Spacing) ...

Page 7

H11AA814 SERIES ORDERING INFORMATION Option Order Entry Identifi 300 300W 3S 3SD MARKING INFORMATION Definitions © 2003 Fairchild Semiconductor Corporation 4-PIN PHOTOTRANSISTOR H11A617 SERIES .S .SD .W .300 .300W .3S .3SD ...

Page 8

H11AA814 SERIES Carrier Tape Specifications 5.00 0.20 0.30 13.2 0.2 0.1 MAX User Direction of Feed NOTE All dimensions are in millimeters © 2003 Fairchild Semiconductor Corporation 4-PIN PHOTOTRANSISTOR H11A617 SERIES 12.0 0.1 4.0 0.1 0.05 4.0 0.1 10.30 0.20 ...

Page 9

H11AA814 SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT ...

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