SL5582W

Manufacturer Part NumberSL5582W
DescriptionOPTOCOUPLER TRANS-OUT WIDE 6-DIP
ManufacturerFairchild Optoelectronics Group
SL5582W datasheet
 


Specifications of SL5582W

Number Of Channels1Input TypeDC
Voltage - Isolation5300VrmsCurrent Transfer Ratio (min)15% @ 2mA
Current Transfer Ratio (max)320% @ 10mAVoltage - Output50V
Current - Output / Channel100mACurrent - Dc Forward (if)100mA
Vce Saturation (max)400mVOutput TypeTransistor
Mounting TypeThrough HolePackage / Case6-DIP (0.400", 10.16mm)
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (65Kb)Embed
Next
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
1
NC
6
1
2
5
2
3
NC
4
3
CNX82A.W
SL5582.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Total Device Power Dissipation @ T
A
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A)
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C
6-PIN PHOTOTRANSISTOR
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
6
1
0.200 (5.08)
0.115 (2.92)
6
5
0.154 (3.90)
0.100 (2.54)
NC
4
0.022 (0.56)
0.016 (0.41)
CNX83A.W
SL5583.W
PIN 1. ANODE
2. CATHODE
NOTE
3. NO CONNECTION
4. EMITTER
All dimensions are in inches (millimeters)
5. COLLECTOR
6. BASE
Symbol
T
STG
T
OPR
T
SOL
T
= 25°C
P
I
V
I
(pk)
F
P
V
CEO
V
CBO
V
ECO
I
P
OPTOCOUPLERS
PACKAGE DIMENSIONS
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.004 (0.10)
MIN
0.400 (10.16)
0.100 (2.54) TYP
Value
-55 to +150
-55 to +100
260 for 10 sec
125
J
250
D
100
F
5.0
R
3.0
140
D
1.33
50
70
7
100
C
150
D
2.0
4/13/00
0.016 (0.40)
0.008 (0.20)
0° to 15°
TYP
Units
°C
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mA
mW
mW/°C
200024D

SL5582W Summary of contents

  • Page 1

    DESCRIPTION The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES • Input/Output pin distance 10.16 mm • UL recognized (File # E90700) APPLICATIONS • ...

  • Page 2

    ELECTRICAL CHARACTERISTICS INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance Note ** Typical values 25°C A Call ...

  • Page 3

    TRANSFER CHARACTERISTICS DC Characteristic Current Transfer Ratio, Collector-Emitter Saturation Voltage ( mA mA Turn-on Time ( mA mA mA, ...

  • Page 4

    PULSE ONLY PULSE OR DC 1.8 1.6 1 -55 ˚ ˚ 100 C ˚ 100 LED FORWARD CURRENT (mA) Figure 1. LED Forward Voltage versus Forward Current ...

  • Page 5

    DISCLAIMER LIFE SUPPORT POLICY SUPER BRIGHT PLCC-2 PACKAGE SURFACE MOUNT LED LAMP SURFACE MOUNT LED LAMP 12/6/00 300089B ...