MT18VDDF6472Y-40BK1 Micron Technology Inc, MT18VDDF6472Y-40BK1 Datasheet

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MT18VDDF6472Y-40BK1

Manufacturer Part Number
MT18VDDF6472Y-40BK1
Description
MODULE DDR 512MB 200MHZ 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18VDDF6472Y-40BK1

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR SDRAM RDIMM
MT18VDDF6472 – 512MB
MT18VDDF12872 – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin RDIMM (MO-206) Figures
Figure 1:
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. F 9/08 EN
PCB height: 28.58mm (1.125in)
(RDIMM)
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
R/C J (-40B)
Products and specifications discussed herein are subject to change by Micron without notice.
DD
= V
DD
1
Q = +2.6V)
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
www.micron.com
1
Figure 2:
Notes: 1. Not recommended for new designs.
PCB height: 28.58mm (1.125in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. CL = CAS (READ) latency; registered mode
module offerings.
will add one clock cycle to CL.
R/C C (-335, -265)
A
A
2
≤ +85°C)
≤ +70°C)
©2003 Micron Technology, Inc. All rights reserved.
3
1
Marking
Features
None
-40B
-335
-265
G
Y
I

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MT18VDDF6472Y-40BK1 Summary of contents

Page 1

DDR SDRAM RDIMM MT18VDDF6472 – 512MB MT18VDDF12872 – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg ...

Page 2

... Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M4, Module 2 Part Number Density MT18VDDF6472G-40B__ 512MB MT18VDDF6472Y-40B__ 512MB MT18VDDF6472G-335__ 512MB MT18VDDF6472Y-335__ 512MB MT18VDDF6472G-265__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V128M4, Module 2 Part Number Density MT18VDDF12872G-40B__ ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 4

Table 6: Pin Descriptions Symbol Type Description A0–12 Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...

Page 5

Functional Block Diagrams Figure 3: Functional Block Diagram (R/C J, -40B RS0# DQS0 DQS1 DQS2 DQS3 DQS4 DQS5 DQS6 DQS7 DQS8 U6, U19 R RAS# e CAS CKE0 s WE# t A0–A12 e BA0, BA1 r ...

Page 6

Figure 4: Functional Block Diagram (R/C C, -335, -265 RS0# DQS0 DQS1 DQS2 DQS3 DQS4 DQS5 DQS6 DQS7 DQS8 U7, U16 R RAS# e CAS CKE0 s WE# t A0–A12 e BA0, BA1 r S0# s ...

Page 7

... JEDEC clock reference board. Registered mode will add one clock cycle to CL. Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 512MB (Die Revision ‘K’) DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet ...

Page 11

Table 10: I Specifications and Conditions – 512MB (All Other Die Revisions) DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet Parameter/Condition Operating ...

Page 12

Table 11: I Specifications and Conditions – 1GB DD Values are shown for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Register and PLL Specifications Table 12: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol DC high-level input voltage command, address DC low-level input voltage command, address AC high-level V ...

Page 14

Table 13: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

Page 15

Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 16

Module Dimensions Figure 5: 184-Pin DDR RDIMM (R/C J, -40B) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.27 (0.05) TYP 2.2 (0.087) 64.77 (2.55) TYP U15 U16 U17 Pin 184 Notes: ...

Page 17

Figure 6: 184-Pin DDR RDIMM (R/C C, -335, -265) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) 1.27 (0.05) TYP TYP 64.77 (2.55) U12 U13 U14 Pin 184 Notes: 1. ...

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